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CNY17F4M

onsemi · Transistor, Photovoltaic Output Optoisolators · DIP-6

CNY17F4M from onsemi, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive LED anode of the gallium arsenide infrared emitting diode; continuous forward current is limited to 60 mA and reverse voltage to 6 V.
2 CATHODE passive LED cathode of the infrared emitting diode; the emitter reverse voltage is rated at 6 V maximum.
3 NC unconnected No internal connection on the CNY17F family per the page 2 schematic; leave unconnected.
4 EMITTER passive NPN phototransistor emitter; emitter-collector voltage (VECO) is rated at 7 V maximum.
5 COLLECTOR passive NPN phototransistor collector; collector-emitter voltage (VCEO) is rated at 70 V and continuous collector current at 50 mA.
6 NC unconnected No internal base connection on the CNY17F family (the datasheet states there is no chip-to-pin 6 base connection), so leave unconnected.

Key specifications

Parameter Value
Manufacturer onsemi
Package DIP-6
Category Optoisolators
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Forward Voltage VF 1 1.15 1.5 V IF = 10 mA 4
Input Forward Voltage VF 1 1.35 1.65 V IF = 60 mA 4
Reverse Leakage Current IR 0.001 10 µA VR = 6 V 4
Collector-to-Emitter Breakdown Voltage BVCEO 70 100 V IC = 1 mA, IF = 0 4
Emitter-to-Collector Breakdown Voltage BVECO 7 10 V IE = 100 µA, IF = 0 4
Collector-to-Emitter Leakage Current ICEO 1 50 nA VCE = 10 V, IF = 0 4
Current Transfer Ratio CTR 160 320 % IF = 10 mA, VCE = 5 V 4
Turn-On Time ton 2 10 µs IC = 2.0 mA, VCC = 10 V, RL = 100 5
Turn-Off Time toff 3 10 µs IC = 2.0 mA, VCC = 10 V, RL = 100 5
Storage Temperature TSTG -40 125 °C 3
Ambient Operating Temperature TA -40 100 °C 3
Junction Temperature TJ -40 125 °C 3
Lead Solder Temperature TSOL 260 °C 10 seconds 3
Total Device Power Dissipation (LED plus detector) PD 270 mW @ 25°C 3
Continuous Forward Current (emitter) IF 60 mA 3
Reverse Voltage (emitter) VR 6 V 3
Forward Current, Peak (emitter) IF(pk) 1.5 A 1 s pulse, 300 pps 3
LED Power Dissipation PD 120 mW 25°C ambient 3
Continuous Collector Current (detector) IC 50 mA 3
Collector-Emitter Voltage (detector) VCEO 70 V 3
Emitter Collector Voltage (detector) VECO 7 V 3
Detector Power Dissipation PD 150 mW @ 25°C 3

CAD (KiCad official)

  • Symbol: CNY17F4M
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: cny17f4m-etched.step / cny17f4m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cny17f4m.step / cny17f4m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 fd77b768cbf070ed, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF