component
CNY17F3M
Public Made by Adomby adom
onsemi Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CNY17F3M
onsemi · Transistor, Photovoltaic Output Optoisolators · DIP-6
CNY17F3M from onsemi, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of the gallium arsenide infrared emitting diode; continuous forward current is rated at 60 mA. |
| 2 | CATHODE | passive | Cathode of the gallium arsenide infrared emitting diode; reverse voltage is rated at 6 V. |
| 3 | NC | unconnected | No internal connection on the CNY17F-series pinout shown in the schematic. |
| 4 | EMITTER | passive | Emitter of the NPN phototransistor; emitter-collector voltage (VECO) is rated at 7 V. |
| 5 | COLLECTOR | passive | Collector of the NPN phototransistor; collector-emitter voltage is rated at 70 V and continuous collector current at 50 mA. |
| 6 | NC | unconnected | No base connection to the phototransistor on the CNY17F-series (the datasheet states no chip-to-pin 6 base connection for CNY17FXM devices). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature | TSTG | -40 | 125 | °C | Total device | 4 | |
| Ambient Operating Temperature | TA | -40 | 100 | °C | Total device | 4 | |
| Junction Temperature | TJ | -40 | 125 | °C | Total device | 4 | |
| Lead Solder Temperature | TSOL | 260 | °C | for 10 seconds | 4 | ||
| Total Device Power Dissipation | PD | 270 | mW | @ 25°C (LED plus detector); derate linearly from 25°C at 2.94 mW/°C | 4 | ||
| Continuous Forward Current (LED) | IF | 60 | mA | Emitter | 4 | ||
| Reverse Voltage (LED) | VR | 6 | V | Emitter | 4 | ||
| Forward Current - Peak (LED) | IF (pk) | 1.5 | A | 1 µs pulse, 300 pps | 4 | ||
| LED Power Dissipation | PD | 120 | mW | @ 25°C ambient; derate linearly from 25°C at 1.41 mW/°C | 4 | ||
| Continuous Collector Current | IC | 50 | mA | Detector | 4 | ||
| Collector-Emitter Voltage | VCEO | 70 | V | Detector | 4 | ||
| Emitter Collector Voltage | VECO | 7 | V | Detector | 4 | ||
| Detector Power Dissipation | PD | 150 | mW | @ 25°C; derate linearly from 25°C at 1.76 mW/°C | 4 | ||
| Maximum Working Insulation Voltage | VIORM | 850 | Vpeak | DIN EN/IEC 60747-5-5 | 3 | ||
| Highest Allowable Over-Voltage | VIOTM | 6000 | Vpeak | DIN EN/IEC 60747-5-5 | 3 | ||
| Case Temperature (safety limit) | TS | 175 | °C | Safety limit value, maximum allowed in event of failure | 3 | ||
| Input Current (safety limit) | IS,INPUT | 350 | mA | Safety limit value, maximum allowed in event of failure | 3 | ||
| Output Power (safety limit) | PS,OUTPUT | 800 | mW | Safety limit value, maximum allowed in event of failure | 3 | ||
| Input Forward Voltage | VF | 1 | 1.15 | 1.5 | V | IF = 10 mA, All Devices; TA = 25°C | 5 |
| Input Forward Voltage | VF | 1 | 1.35 | 1.65 | V | IF = 60 mA, CNY17XM/CNY17FXM (includes CNY17F3M); TA = 25°C | 5 |
| Reverse Leakage Current | IR | 0.001 | 10 | µA | VR = 6 V, All Devices | 5 | |
| Breakdown Voltage Collector-to-Emitter | BVCEO | 70 | 100 | V | IC = 1 mA, IF = 0, All Devices | 5 | |
| Breakdown Voltage Emitter-to-Collector | BVECO | 7 | 10 | V | IE = 100 µA, IF = 0, All Devices | 5 | |
| Leakage Current Collector-to-Emitter | ICEO | 1 | 50 | nA | VCE = 10 V, IF = 0, All Devices | 5 | |
| Current Transfer Ratio | CTR | 100 | 200 | % | IF = 10 mA, VCE = 5 V, CNY173M/CNY17F3M | 5 | |
| Turn-On Time | ton | 2 | 10 | µs | IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, All Devices (non-saturated) | 6 | |
| Turn-Off Time | toff | 3 | 10 | µs | IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, All Devices (non-saturated) | 6 |
CAD (KiCad official)
- Symbol:
CNY17F3M - Footprint:
Package_DIP:DIP-6_W7.62mm - 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files:
cny17f3m-etched.step/cny17f3m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cny17f3m.step/cny17f3m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (14 pp, sha256
e7b1c521dbfac32f, retrieved 2026-10-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CNY17F3M
**onsemi** · Transistor, Photovoltaic Output Optoisolators · DIP-6
CNY17F3M from onsemi, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of the gallium arsenide infrared emitting diode; continuous forward current is rated at 60 mA. |
| 2 | CATHODE | passive | Cathode of the gallium arsenide infrared emitting diode; reverse voltage is rated at 6 V. |
| 3 | NC | unconnected | No internal connection on the CNY17F-series pinout shown in the schematic. |
| 4 | EMITTER | passive | Emitter of the NPN phototransistor; emitter-collector voltage (VECO) is rated at 7 V. |
| 5 | COLLECTOR | passive | Collector of the NPN phototransistor; collector-emitter voltage is rated at 70 V and continuous collector current at 50 mA. |
| 6 | NC | unconnected | No base connection to the phototransistor on the CNY17F-series (the datasheet states no chip-to-pin 6 base connection for CNY17FXM devices). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature | TSTG | -40 | | 125 | °C | Total device | 4 |
| Ambient Operating Temperature | TA | -40 | | 100 | °C | Total device | 4 |
| Junction Temperature | TJ | -40 | | 125 | °C | Total device | 4 |
| Lead Solder Temperature | TSOL | | | 260 | °C | for 10 seconds | 4 |
| Total Device Power Dissipation | PD | | | 270 | mW | @ 25°C (LED plus detector); derate linearly from 25°C at 2.94 mW/°C | 4 |
| Continuous Forward Current (LED) | IF | | | 60 | mA | Emitter | 4 |
| Reverse Voltage (LED) | VR | | | 6 | V | Emitter | 4 |
| Forward Current - Peak (LED) | IF (pk) | | | 1.5 | A | 1 µs pulse, 300 pps | 4 |
| LED Power Dissipation | PD | | | 120 | mW | @ 25°C ambient; derate linearly from 25°C at 1.41 mW/°C | 4 |
| Continuous Collector Current | IC | | | 50 | mA | Detector | 4 |
| Collector-Emitter Voltage | VCEO | | | 70 | V | Detector | 4 |
| Emitter Collector Voltage | VECO | | | 7 | V | Detector | 4 |
| Detector Power Dissipation | PD | | | 150 | mW | @ 25°C; derate linearly from 25°C at 1.76 mW/°C | 4 |
| Maximum Working Insulation Voltage | VIORM | | | 850 | Vpeak | DIN EN/IEC 60747-5-5 | 3 |
| Highest Allowable Over-Voltage | VIOTM | | | 6000 | Vpeak | DIN EN/IEC 60747-5-5 | 3 |
| Case Temperature (safety limit) | TS | | | 175 | °C | Safety limit value, maximum allowed in event of failure | 3 |
| Input Current (safety limit) | IS,INPUT | | | 350 | mA | Safety limit value, maximum allowed in event of failure | 3 |
| Output Power (safety limit) | PS,OUTPUT | | | 800 | mW | Safety limit value, maximum allowed in event of failure | 3 |
| Input Forward Voltage | VF | 1 | 1.15 | 1.5 | V | IF = 10 mA, All Devices; TA = 25°C | 5 |
| Input Forward Voltage | VF | 1 | 1.35 | 1.65 | V | IF = 60 mA, CNY17XM/CNY17FXM (includes CNY17F3M); TA = 25°C | 5 |
| Reverse Leakage Current | IR | | 0.001 | 10 | µA | VR = 6 V, All Devices | 5 |
| Breakdown Voltage Collector-to-Emitter | BVCEO | 70 | 100 | | V | IC = 1 mA, IF = 0, All Devices | 5 |
| Breakdown Voltage Emitter-to-Collector | BVECO | 7 | 10 | | V | IE = 100 µA, IF = 0, All Devices | 5 |
| Leakage Current Collector-to-Emitter | ICEO | | 1 | 50 | nA | VCE = 10 V, IF = 0, All Devices | 5 |
| Current Transfer Ratio | CTR | 100 | | 200 | % | IF = 10 mA, VCE = 5 V, CNY173M/CNY17F3M | 5 |
| Turn-On Time | ton | 2 | | 10 | µs | IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, All Devices (non-saturated) | 6 |
| Turn-Off Time | toff | 3 | | 10 | µs | IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, All Devices (non-saturated) | 6 |
## CAD (KiCad official)
- Symbol: `CNY17F3M`
- Footprint: `Package_DIP:DIP-6_W7.62mm`
- 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files: `cny17f3m-etched.step` / `cny17f3m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cny17f3m.step` / `cny17f3m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896860613959680) (14 pp, sha256 `e7b1c521dbfac32f`, retrieved 2026-10-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cny17f3m-datasheet.pdf)