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CNY17F-3X016

Vishay Intertech · Transistor Output Optocoupler · DIP-6

CNY17F-3X016 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A input Anode of the gallium arsenide infrared emitting diode, with DC forward current rated at 60 mA maximum.
2 C passive Cathode of the infrared emitting diode, with reverse voltage rated at 6 V.
3 NC unconnected No internal connection; the base terminal is not connected on the F type.
4 E passive Emitter of the silicon planar phototransistor, with collector emitter breakdown voltage BVCEO rated at 70 V.
5 C passive Collector of the silicon planar phototransistor, with collector current rated at 50 mA.
6 NC unconnected No connection; the base terminal is not connected on the F type, which improves common-mode interference immunity.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DIP-6
Category Optocoupler
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Breakdown voltage VBR 6 V IR = 10 μA 2
Forward voltage VF 1.39 1.65 V IF = 60 mA 2
Reverse current IR 0.01 10 μA VR = 6 V 2
Collector emitter saturation voltage VCEsat 0.25 0.4 V IF = 10 mA, IC = 2.5 mA 3
Collector emitter leakage current ICEO 5 100 nA VCE = 10 V 3
Current transfer ratio CTR 100 200 % IF = 10 mA 3
Current transfer ratio CTR 34 70 % IF = 1 mA 3
Reverse voltage VR 6 V 2
DC forward current IF 60 mA 2
Surge forward current IFSM 2.5 A t ≤ 10 μs 2
Power dissipation (input) Pdiss 100 mW 2
Collector emitter breakdown voltage BVCEO 70 V 2
Collector current IC 50 mA 2
Collector peak current ICM 100 mA tp/T = 0.5, tp ≤ 10 ms 2
Output power dissipation Pdiss 150 mW 2
Isolation test voltage VISO 5000 VRMS t = 1 min 2
Storage temperature range Tstg -55 150 °C 2
Ambient temperature range Tamb -55 110 °C 2
Junction temperature Tj 100 °C 2
Soldering temperature Tsld 260 °C 2 mm from case, ≤ 10 s 2
Total power dissipation Pdiss 250 mW 2
Output safety power PSO 700 mW 4
Input safety current ISI 400 mA 4
Safety temperature TSI 175 °C 4
Maximum transient isolation voltage VIOTM 8000 Vpeak 4
Maximum repetitive peak isolation voltage VIORM 890 Vpeak 4
Creepage distance 7 mm Standard DIP-4 4
Clearance distance 8 mm Standard DIP-4 4
Insulation thickness DTI 0.4 mm 4

CAD (KiCad official)

  • Symbol: CNY17F-3X016
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: cny17f-3x016-etched.step / cny17f-3x016-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cny17f-3x016.step / cny17f-3x016.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 4fa634237ff49dcd, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF