component
CNY17F-3X001
Public Made by Adomby adom
Vishay Intertech Transistor Output Optocoupler, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CNY17F-3X001
Vishay Intertech · Transistor Output Optocoupler · DIP-6
CNY17F-3X001 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the GaAs infrared emitting diode; forward current max 60 mA, reverse voltage max 6 V. |
| 2 | C | passive | Cathode of the infrared emitting diode (input side). |
| 3 | NC | unconnected | No connection. |
| 4 | E | passive | Phototransistor emitter (output side). |
| 5 | C | passive | Phototransistor collector; BVCEO 70 V max, collector current 50 mA max. |
| 6 | NC | unconnected | No connection (base terminal of the phototransistor is not connected on the F type). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-6 |
| Category | Optocoupler |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| CTR (IF=10 mA) | CTR | 100 | 200 | % | IF = 10 mA, VCE = 5 V, CNY17F-3 | 3 | |
| CTR (IF=1 mA) | CTR | 34 | 70 | % | IF = 1 mA, CNY17F-3 | 3 | |
| Collector emitter leakage current | ICEO | 5 | 100 | nA | VCE = 10 V, CNY17F-3 | 3 | |
| Forward voltage | VF | 1.39 | 1.65 | V | IF = 60 mA | 2 | |
| Breakdown voltage | VBR | 6 | V | IR = 10 μA | 2 | ||
| Reverse current | IR | 0.01 | 10 | μA | VR = 6 V | 2 | |
| Collector emitter saturation voltage | VCEsat | 0.25 | 0.4 | V | IF = 10 mA, IC = 2.5 mA | 3 | |
| Reverse voltage | VR | 6 | V | Tamb = 25 °C | 2 | ||
| DC forward current | IF | 60 | mA | Tamb = 25 °C | 2 | ||
| Surge forward current | IFSM | 2.5 | A | t ≤ 10 μs | 2 | ||
| Input power dissipation | Pdiss | 100 | mW | INPUT | 2 | ||
| Collector emitter breakdown voltage | BVCEO | 70 | V | 2 | |||
| Collector current | IC | 50 | mA | 2 | |||
| Collector peak current | ICM | 100 | mA | tp/T = 0.5, tp ≤ 10 ms | 2 | ||
| Output power dissipation | Pdiss | 150 | mW | OUTPUT | 2 | ||
| Isolation test voltage | VISO | 5000 | VRMS | t = 1 min, between emitter and detector | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Ambient temperature range | Tamb | -55 | 110 | °C | 2 | ||
| Junction temperature | Tj | 100 | °C | 2 | |||
| Soldering temperature | Tsld | 260 | °C | 2 mm from case, ≤ 10 s | 2 | ||
| Total power dissipation | Pdiss | 250 | mW | COUPLER | 2 | ||
| Output safety power | PSO | 700 | mW | Maximum safety ratings | 4 | ||
| Input safety current | ISI | 400 | mA | Maximum safety ratings | 4 | ||
| Safety temperature | TSI | 175 | °C | Maximum safety ratings | 4 | ||
| Capacitance (input) | CO | 25 | pF | VR = 0 V, f = 1 MHz | 2 | ||
| Collector emitter capacitance | CCE | 5.2 | pF | VCE = 5 V, f = 1 MHz | 2 | ||
| Base collector capacitance | CBC | 6.5 | pF | VCE = 5 V, f = 1 MHz | 2 | ||
| Emitter base capacitance | CEB | 7.5 | pF | VCE = 5 V, f = 1 MHz | 2 | ||
| Coupling capacitance | CC | 0.6 | pF | 3 | |||
| Turn-on time (linear) | ton | 3 | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Rise time (linear) | tr | 2 | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Turn-off time (linear) | toff | 2.3 | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Fall time (linear) | tf | 2 | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Cut-off frequency | fCO | 110 | kHz | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Turn-on time (saturated) | ton | 4.2 | μs | IF = 10 mA, CNY17F-3 | 3 | ||
| Rise time (saturated) | tr | 3 | μs | IF = 10 mA, CNY17F-3 | 3 | ||
| Turn-off time (saturated) | toff | 23 | μs | IF = 10 mA, CNY17F-3 | 3 | ||
| Fall time (saturated) | tf | 14 | μs | IF = 10 mA, CNY17F-3 | 3 |
CAD (KiCad official)
- Symbol:
CNY17F-3X001 - Footprint:
Package_DIP:DIP-6_W7.62mm - 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files:
cny17f-3x001-etched.step/cny17f-3x001-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cny17f-3x001.step/cny17f-3x001.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
4fa634237ff49dcd, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CNY17F-3X001
**Vishay Intertech** · Transistor Output Optocoupler · DIP-6
CNY17F-3X001 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the GaAs infrared emitting diode; forward current max 60 mA, reverse voltage max 6 V. |
| 2 | C | passive | Cathode of the infrared emitting diode (input side). |
| 3 | NC | unconnected | No connection. |
| 4 | E | passive | Phototransistor emitter (output side). |
| 5 | C | passive | Phototransistor collector; BVCEO 70 V max, collector current 50 mA max. |
| 6 | NC | unconnected | No connection (base terminal of the phototransistor is not connected on the F type). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-6 |
| Category | Optocoupler |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| CTR (IF=10 mA) | CTR | 100 | | 200 | % | IF = 10 mA, VCE = 5 V, CNY17F-3 | 3 |
| CTR (IF=1 mA) | CTR | 34 | 70 | | % | IF = 1 mA, CNY17F-3 | 3 |
| Collector emitter leakage current | ICEO | | 5 | 100 | nA | VCE = 10 V, CNY17F-3 | 3 |
| Forward voltage | VF | | 1.39 | 1.65 | V | IF = 60 mA | 2 |
| Breakdown voltage | VBR | 6 | | | V | IR = 10 μA | 2 |
| Reverse current | IR | | 0.01 | 10 | μA | VR = 6 V | 2 |
| Collector emitter saturation voltage | VCEsat | | 0.25 | 0.4 | V | IF = 10 mA, IC = 2.5 mA | 3 |
| Reverse voltage | VR | | | 6 | V | Tamb = 25 °C | 2 |
| DC forward current | IF | | | 60 | mA | Tamb = 25 °C | 2 |
| Surge forward current | IFSM | | | 2.5 | A | t ≤ 10 μs | 2 |
| Input power dissipation | Pdiss | | | 100 | mW | INPUT | 2 |
| Collector emitter breakdown voltage | BVCEO | | | 70 | V | | 2 |
| Collector current | IC | | | 50 | mA | | 2 |
| Collector peak current | ICM | | | 100 | mA | tp/T = 0.5, tp ≤ 10 ms | 2 |
| Output power dissipation | Pdiss | | | 150 | mW | OUTPUT | 2 |
| Isolation test voltage | VISO | | | 5000 | VRMS | t = 1 min, between emitter and detector | 2 |
| Storage temperature range | Tstg | -55 | | 150 | °C | | 2 |
| Ambient temperature range | Tamb | -55 | | 110 | °C | | 2 |
| Junction temperature | Tj | | | 100 | °C | | 2 |
| Soldering temperature | Tsld | | | 260 | °C | 2 mm from case, ≤ 10 s | 2 |
| Total power dissipation | Pdiss | | | 250 | mW | COUPLER | 2 |
| Output safety power | PSO | | | 700 | mW | Maximum safety ratings | 4 |
| Input safety current | ISI | | | 400 | mA | Maximum safety ratings | 4 |
| Safety temperature | TSI | | | 175 | °C | Maximum safety ratings | 4 |
| Capacitance (input) | CO | | 25 | | pF | VR = 0 V, f = 1 MHz | 2 |
| Collector emitter capacitance | CCE | | 5.2 | | pF | VCE = 5 V, f = 1 MHz | 2 |
| Base collector capacitance | CBC | | 6.5 | | pF | VCE = 5 V, f = 1 MHz | 2 |
| Emitter base capacitance | CEB | | 7.5 | | pF | VCE = 5 V, f = 1 MHz | 2 |
| Coupling capacitance | CC | | 0.6 | | pF | | 3 |
| Turn-on time (linear) | ton | | 3 | | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 |
| Rise time (linear) | tr | | 2 | | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 |
| Turn-off time (linear) | toff | | 2.3 | | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 |
| Fall time (linear) | tf | | 2 | | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 |
| Cut-off frequency | fCO | | 110 | | kHz | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 |
| Turn-on time (saturated) | ton | | 4.2 | | μs | IF = 10 mA, CNY17F-3 | 3 |
| Rise time (saturated) | tr | | 3 | | μs | IF = 10 mA, CNY17F-3 | 3 |
| Turn-off time (saturated) | toff | | 23 | | μs | IF = 10 mA, CNY17F-3 | 3 |
| Fall time (saturated) | tf | | 14 | | μs | IF = 10 mA, CNY17F-3 | 3 |
## CAD (KiCad official)
- Symbol: `CNY17F-3X001`
- Footprint: `Package_DIP:DIP-6_W7.62mm`
- 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files: `cny17f-3x001-etched.step` / `cny17f-3x001-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cny17f-3x001.step` / `cny17f-3x001.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](docs/cny17f-3x001-datasheet.pdf) (9 pp, sha256 `4fa634237ff49dcd`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cny17f-3x001-datasheet.pdf)