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Ray Publish 0.1.0 2cad61f 8d ago

CNY173M

onsemi · Transistor, Photovoltaic Output Optoisolators · DIP-6

CNY173M from onsemi, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive LED anode of the gallium arsenide infrared emitting diode; the datasheet limits continuous forward current to 60 mA (IF, absolute maximum) and peak forward current to 1.5 A (1 µs pulse, 300 pps).
2 CATHODE passive LED cathode of the infrared emitting diode; the datasheet gives a reverse voltage limit of 6 V (VR).
3 NC unconnected No internal connection on this variant.
4 EMITTER passive NPN phototransistor emitter; the datasheet gives an emitter-collector voltage limit of 7 V (VECO).
5 COLLECTOR passive NPN phototransistor collector; the datasheet limits collector-emitter voltage to 70 V (VCEO) and continuous collector current to 50 mA (IC).
6 BASE passive Phototransistor base brought out for this variant (CNY171M/2M/3M/4M), usable with a base-emitter resistor to adjust CTR and switching; the datasheet gives no pin-specific voltage or current limit.

Key specifications

Parameter Value
Manufacturer onsemi
Package DIP-6
Category Optoisolators
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature TSTG -40 125 °C 4
Ambient Operating Temperature TA -40 100 °C 4
Junction Temperature TJ -40 125 ºC 4
Lead Solder Temperature TSOL 260 °C for 10 seconds 4
Total Device Power Dissipation PD 270 mW @ 25°C (LED plus detector) 4
Continuous Forward Current IF 60 mA 4
Reverse Voltage VR 6 V 4
Forward Current - Peak IF (pk) 1.5 A 1 µs pulse, 300 pps 4
LED Power Dissipation PD 120 mW 25°C ambient 4
Continuous Collector Current IC 50 mA 4
Collector-Emitter Voltage VCEO 70 V 4
Emitter Collector Voltage VECO 7 V 4
Detector Power Dissipation PD 150 mW @ 25°C 4
Input Forward Voltage VF 1 1.15 1.5 V IF = 10 mA (All Devices) 5
Input Forward Voltage VF 1 1.35 1.65 V IF = 60 mA (CNY17XM, CNY17FXM) 5
Reverse Leakage Current IR 0.001 10 µA VR = 6 V 5
Breakdown Voltage Collector-to-Emitter BVCEO 70 100 V IC = 1 mA, IF = 0 5
Breakdown Voltage Collector-to-Base BVCBO 70 120 V IC = 10 µA, IF = 0 (CNY17XM) 5
Breakdown Voltage Emitter-to-Collector BVECO 7 10 V IE = 100 µA, IF = 0 5
Leakage Current Collector-to-Emitter ICEO 1 50 nA VCE = 10 V, IF = 0 5
Current Transfer Ratio CTR 100 200 % IF = 10 mA, VCE = 5 V (CNY173M, CNY17F3M) 5
Turn-On Time ton 2 10 µs IC = 2.0 mA, VCC = 10 V, RL = 100 Ω 6
Turn-Off Time toff 3 10 µs IC = 2.0 mA, VCC = 10 V, RL = 100 Ω 6

CAD (KiCad official)

  • Symbol: CNY173M
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: cny173m-etched.step / cny173m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cny173m.step / cny173m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (14 pp, sha256 133560219ed34910, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF