component

CNY172TVM

Public Made by Adom

by adom

onsemi Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CNY172TVM

onsemi · Transistor, Photovoltaic Output Optoisolators · DIP-6

CNY172TVM from onsemi, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive LED anode of the input GaAs infrared emitting diode; continuous forward current is limited to 60 mA (VF 1.15 V typ at IF = 10 mA).
2 CATHODE passive LED cathode of the input infrared emitting diode; reverse voltage is limited to 6 V.
3 NC unconnected No internal connection.
4 EMITTER passive Emitter of the NPN phototransistor output; emitter-collector voltage is limited to 7 V.
5 COLLECTOR passive Collector of the NPN phototransistor output; collector-emitter voltage is limited to 70 V and continuous collector current to 50 mA.
6 BASE passive Base of the NPN phototransistor, brought out on the CNY171M/2M/3M/4M devices for an optional base resistor (RBE) to tune CTR and switching speed.

Key specifications

Parameter Value
Manufacturer onsemi
Package DIP-6
Category Optoisolators
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Current Transfer Ratio (CNY171M, CNY17F1M) CTR 40 80 % IF = 10 mA, VCE = 5 V 4
Input Forward Voltage VF 1 1.15 1.5 V IF = 10 mA 4
Input Forward Voltage (CNY17XM) VF 1 1.35 1.65 V IF = 60 mA 4
Reverse Leakage Current IR 0.001 10 µA VR = 6 V 4
Breakdown Voltage Collector-to-Emitter BVCEO 70 100 V IC = 1 mA, IF = 0 4
Breakdown Voltage Collector-to-Base (CNY17XM) BVCBO 70 120 V IC = 10 µA, IF = 0 4
Breakdown Voltage Emitter-to-Collector BVECO 7 10 V IE = 100 µA, IF = 0 4
Leakage Current Collector-to-Emitter ICEO 1 50 nA VCE = 10 V, IF = 0 4
Leakage Current Collector-to-Base (CNY17XM) ICBO 20 nA VCB = 10 V, IF = 0 4
Turn-On Time ton 2 10 µs IC = 2.0 mA, VCC = 10 V, RL = 100 5
Turn-Off Time toff 3 10 µs IC = 2.0 mA, VCC = 10 V, RL = 100 5
Storage Temperature TSTG -40 125 °C 3
Ambient Operating Temperature TA -40 100 °C 3
Junction Temperature TJ -40 125 °C 3
Lead Solder Temperature TSOL 260 °C for 10 seconds 3
Total Device Power Dissipation PD 270 mW @ 25°C (LED plus detector) 3
Continuous Forward Current IF 60 mA 3
Reverse Voltage VR 6 V 3
Forward Current, Peak IF(pk) 1.5 A 1 s pulse, 300 pps 3
LED Power Dissipation PD 120 mW 25°C ambient 3
Continuous Collector Current IC 50 mA 3
Collector-Emitter Voltage VCEO 70 V 3
Emitter Collector Voltage VECO 7 V 3
Detector Power Dissipation PD 150 mW @ 25°C 3

CAD (KiCad official)

  • Symbol: CNY172TVM
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: cny172tvm-etched.step / cny172tvm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cny172tvm.step / cny172tvm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 fd77b768cbf070ed, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF