component
CMT6080G
Public Made by Adomby adom
iCM(创芯微) , TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
| viewers | 3d ago |
| cmt6080g-etched.glb | 3d ago |
| cmt6080g-etched.step | 3d ago |
| cmt6080g-hero.glb | 3d ago |
| cmt6080g-hero.overlay.json | 3d ago |
| cmt6080g.glb | 3d ago |
| cmt6080g.kicad_mod | 3d ago |
| cmt6080g.kicad_sym | 3d ago |
| cmt6080g.lbr | 3d ago |
| cmt6080g.step | 3d ago |
| package.json | 3d ago |
| page.json | 3d ago |
| README.md | 3d ago |
CMT6080G
iCM(创芯微) · IC · TO-263
CMT6080G from iCM(创芯微), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated at ±20 V maximum, with a threshold of 2 V min to 4 V max at ID=250uA. |
| 2 | D | passive | Drain (middle lead, shortened, internally common with the exposed tab); drain-source voltage is rated at 60 V and continuous current at 80 A at Tc=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is 80 A max and pulsed source current is 320 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | iCM(创芯微) |
| Package | TO-263 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 2.7 | 4 | V | VGS=VDS, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 5.3 | 7 | mΩ | VGS=10V, ID=30A | 2 | |
| Drain-Source Leakage Current (TJ=25℃) | IDSS | 1 | uA | VDS=60V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (TJ=125℃) | IDSS | 10 | uA | VDS=48V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | Is | 80 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | Ism | 320 | A | 2 | |||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@Tc=25℃ | 80 | A | VGS=10V | 1 | ||
| Continuous Drain Current | ID@Tc=100℃ | 50 | A | VGS=10V | 1 | ||
| Pulsed Drain Current | IDM | 320 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 380 | mJ | 1 | |||
| Total Power Dissipation | PD@Tc=25℃ | 78 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | Tj | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 28 | 32 | ℃/W | 2 | ||
| Thermal Resistance Junction-Case | RθJC | 1.45 | 1.6 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
CMT6080G - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
cmt6080g-etched.step/cmt6080g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmt6080g.step/cmt6080g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: iCM(创芯微) datasheet (6 pp, sha256
90cb04e578612bfe, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).