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CMSA65R380Q

Public Made by Adom

by adom

Cmos MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMSA65R380Q

Cmos · MOSFETs · DFN-8(5x6)

CMSA65R380Q from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel super junction MOSFET; continuous source current is rated 8 A at TC=25℃ per the datasheet.
2 S passive Source terminal of the N-channel super junction MOSFET; continuous source current is rated 8 A at TC=25℃ per the datasheet.
3 S passive Source terminal of the N-channel super junction MOSFET; continuous source current is rated 8 A at TC=25℃ per the datasheet.
4 G input Gate terminal; gate-source voltage is rated ±30 V per the absolute maximum ratings.
5 D passive Drain terminal of the N-channel super junction MOSFET; drain-source voltage is rated 650 V.
6 D passive Drain terminal of the N-channel super junction MOSFET; drain-source voltage is rated 650 V.
7 D passive Drain terminal of the N-channel super junction MOSFET; drain-source voltage is rated 650 V.
8 D passive Drain terminal of the N-channel super junction MOSFET; drain-source voltage is rated 650 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS 30 V 1
Continuous Drain Current ID 8 A TC=25℃ 1
Continuous Drain Current ID 6.4 A TC=100℃ 1
Pulsed Drain Current IDM 32 A 1
Single Pulse Avalanche Energy EAS 1 mJ 1
Total Power Dissipation PD 57 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 0.365 Ω VGS=10V, ID=5A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS= VGS, ID = 250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=650V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS 30V, VDS=0V 2
Continuous Source Current IS 8 A 2
Pulsed Source Current ISM 32 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 0.89 1.4 V VGS=0V, IS=11A, TJ=25℃ 2
Thermal Resistance Junction-ambient R JA 59 /W 1
Thermal Resistance Junction-Case R JC 2.63 /W 1

CAD (KiCad official)

  • Symbol: CMSA65R380Q
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa65r380q-etched.step / cmsa65r380q-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa65r380q.step / cmsa65r380q.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (5 pp, sha256 d4cee6f2bf8513e0, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF