component
CMSA65R280Q
Public Made by Adomby adom
Cmos MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMSA65R280Q
Cmos · MOSFETs · DFN-8(5x6)
CMSA65R280Q from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the MOSFET, rated with the datasheet's absolute maximum drain-source voltage of 650 V. |
| 2 | S | passive | Source terminal of the MOSFET, rated with the datasheet's absolute maximum drain-source voltage of 650 V. |
| 3 | S | passive | Source terminal of the MOSFET, rated with the datasheet's absolute maximum drain-source voltage of 650 V. |
| 4 | G | input | Gate terminal; the datasheet rates gate-source voltage VGS at 30 V and gate threshold VGS(th) at 2 V min to 4 V max. |
| 5 | D | passive | Drain terminal; the datasheet rates drain-source voltage at 650 V and continuous drain current at 14 A at TC=25℃. |
| 6 | D | passive | Drain terminal; the datasheet rates drain-source voltage at 650 V and continuous drain current at 14 A at TC=25℃. |
| 7 | D | passive | Drain terminal; the datasheet rates drain-source voltage at 650 V and continuous drain current at 14 A at TC=25℃. |
| 8 | D | passive | Drain terminal; the datasheet rates drain-source voltage at 650 V and continuous drain current at 14 A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 0.3 | Ω | VGS=10V, ID=6A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS= VGS, ID = 250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=650V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS 30V, VDS=0V | 2 | ||
| Continuous Source Current | IS | 14 | A | 2 | |||
| Pulsed Source Current | ISM | 56 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.86 | 1.2 | V | VGS=0V, IS=12A, TJ=25℃ | 2 | |
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | 30 | V | 1 | |||
| Continuous Drain Current | ID@TC=25 | 14 | A | TC=25 | 1 | ||
| Continuous Drain Current | ID@TC=100 | 11 | A | TC=100 | 1 | ||
| Pulsed Drain Current | IDM | 56 | A | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | 150 | ℃ | 1 | |||
| Thermal Resistance Junction-ambient | R JA | 59 | /W | 1 | |||
| Thermal Resistance Junction-Case | R JC | 2.2 | /W | 1 |
CAD (KiCad official)
- Symbol:
CMSA65R280Q - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
cmsa65r280q-etched.step/cmsa65r280q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmsa65r280q.step/cmsa65r280q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (5 pp, sha256
af2f30217b587f97, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).