main
Ray Set visibility: public d997987 4d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "cmsa150n04b",
  "title": "CMSA150N04B",
  "brief": "Cmos(广东场效应半导体) , DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "CMSA150N04B",
    "manufacturer": "Cmos(广东场效应半导体)",
    "package": "DFN-8(5x6)",
    "pin_count": 9,
    "category": "IC",
    "subcategory": "IC",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603179090358775808",
    "parts": {
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      "lbr": "cmsa150n04b.lbr"
    },
    "distributor_links": {
      "lcsc": "C6939758"
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    "distributor_check": {
      "checked_at": "2026-10-19T09:46:42Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "error"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this pin, and the device is rated 40 V VDS with ±20 V VGS."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this pin, and the device is rated 40 V VDS with ±20 V VGS."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this pin, and the device is rated 40 V VDS with ±20 V VGS."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal; the gate-source voltage is rated ±20 V (VGS) and the threshold is 1 V to 3 V at VGS=VDS, ID=250µA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 40 V (VDS)."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 40 V (VDS)."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 40 V (VDS)."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 40 V (VDS)."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pin-configuration drawing for DFN-8 5x6 was not captured as text with numbers. The pin numbers 1; The datasheet does not state a per-pin function or limit for individual pins. Descriptions reuse the; The datasheet does not show whether the package has an exposed thermal pad or any additional pad bey",
          "exposed pad 9 added from the footprint",
          "1/9 pins cited to the wrong page (name found elsewhere): ['7:D@p1']"
        ],
        "pages_sent": 2,
        "cost_usd": 0.0203,
        "at": "2026-10-19T09:46:29"
      },
      "datasheet": {
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        "pages": 2,
        "sha256": "29572c64bfeea334",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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      "footprint": "viewers/footprint.html"
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        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-10-19",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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      {
        "file": "cmsa150n04b-etched.step",
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        "sha256": "7ea61ced01dc15e97b35d0bc2610dd6ab3ac0975dc4659474eb89b3f3a43542f",
        "checked": "2026-10-19",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Cmos(广东场效应半导体)",
      "Package": "DFN-8(5x6)",
      "Category": "",
      "Pins": "9"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "29572c64bfeea3348fa948a0eeb2927d60e3de10eb3c2cf8a8b74ee67c2ae1e8",
      "rows": [
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          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "",
          "source_page": 1,
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        },
        {
          "name": "Gate-Source Voltage",
          "symbol": "VGS",
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          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Total Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 75,
          "conditions": "TC=25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Storage Temperature Range",
          "symbol": "TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        {
          "name": "Operating Junction Temperature Range",
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          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        {
          "name": "Continuous Drain Current",
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          "min": null,
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          "unit": "A",
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          "max": 90,
          "conditions": "TC=100℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current",
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          "unit": "A",
          "min": null,
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        {
          "name": "Single Pulse Avalanche Energy",
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          "unit": "mJ",
          "min": null,
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          "max": 480,
          "conditions": "",
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        {
          "name": "Thermal Resistance, Junction-to-Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "",
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        },
        {
          "name": "Thermal Resistance Junction-Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 1.67,
          "conditions": "",
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          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 40,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250uA",
          "source_page": 2,
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        },
        {
          "name": "Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 2.8,
          "conditions": "VGS=10V, ID=20A",
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          "source": "datasheet"
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        {
          "name": "Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
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          "conditions": "VGS=4.5V, ID=20A",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
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          "typ": null,
          "max": 3,
          "conditions": "VGS=VDS, ID=250μA",
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        },
        {
          "name": "Drain-Source Leakage Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "uA",
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          "conditions": "VDS=32V, VGS=0V",
          "source_page": 2,
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        },
        {
          "name": "Gate-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V, VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode continuous forward current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 110,
          "conditions": "",
          "source_page": 2,
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        },
        {
          "name": "Diode pulse current",
          "symbol": "IS,pulse",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 330,
          "conditions": "",
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          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VGS=0V, IF=20A, Tj=25℃",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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