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Ray Publish 0.1.0 7f8e460 7d ago

CMSA150N03

Cmos · MOSFETs · DFN-8(5x6)

CMSA150N03 from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; pin 1 is marked on the package, and the datasheet gives VDS 30V and ID 150A at TC=25℃.
2 S passive Source of the N-channel MOSFET, connected to the same source node as the other S pins.
3 S passive Source of the N-channel MOSFET, connected to the same source node as the other S pins.
4 G input Gate of the N-channel MOSFET; absolute maximum VGS is ±20V and the threshold VGS(th) is 1V to 2.5V.
5 D passive Drain of the N-channel MOSFET; VDS is rated 30V and pulsed drain current IDM is 450A.
6 D passive Drain of the N-channel MOSFET, connected to the same drain node as the other D pins.
7 D passive Drain of the N-channel MOSFET, connected to the same drain node as the other D pins.
8 D passive Drain of the N-channel MOSFET, connected to the same drain node as the other D pins.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2 2.7 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 2.5 3.5 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1 2.5 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 5 uA VDS=30V, VGS=0V, Tc=55℃ 2
Drain-Source Leakage Current IDSS 1 uA VDS=30V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode continuous forward current IS 150 A 2
Diode pulse current IS,pulse 450 A 2
Diode Forward Voltage VSD 1 V VGS=0V, IF=15A, Tj=25℃ 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 150 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 110 A TC=100℃ 1
Pulsed Drain Current IDM 450 A 1
Single Pulse Avalanche Energy EAS 140 mJ 1
Total Power Dissipation PD@TC=25℃ 110 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 55 ℃/ W 1
Thermal Resistance Junction-Case RθJC 1.5 ℃/ W 1

CAD (KiCad official)

  • Symbol: CMSA150N03
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa150n03-etched.step / cmsa150n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa150n03.step / cmsa150n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (2 pp, sha256 2f337f3f2ec62e59, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF