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Contents

README

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CMSA120P03A

Cmos(广东场效应半导体) · MOSFETs · DFN-8(5x6)

CMSA120P03A from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; absolute maximum drain-source voltage is -30 V.
2 S passive Source terminal of the P-channel MOSFET; absolute maximum drain-source voltage is -30 V.
3 S passive Source terminal of the P-channel MOSFET; absolute maximum drain-source voltage is -30 V.
4 G input Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V.
5 D passive Drain terminal of the P-channel MOSFET; continuous drain current is rated -150 A at TC=25℃.
6 D passive Drain terminal of the P-channel MOSFET; continuous drain current is rated -150 A at TC=25℃.
7 D passive Drain terminal of the P-channel MOSFET; continuous drain current is rated -150 A at TC=25℃.
8 D passive Drain terminal of the P-channel MOSFET; continuous drain current is rated -150 A at TC=25℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 3.1 3.6 mΩ VGS=-10V, ID=-28A 2
Static Drain-Source On-Resistance RDS(ON) 4.2 5 mΩ VGS=-4.5V, ID=-25A 2
Gate Threshold Voltage VGS(th) -1 -2 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -150 A 2
Pulsed Source Current ISM -600 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -0.82 -1.2 V VGS=0V, IF=-25A 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25 -150 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ -105 A TC=100℃ 1
Pulsed Drain Current IDM -600 A 1
Total Power Dissipation PD@TC=25 78 W TC=25 1
EAS Single Pulse Avalanche Energy EAS 200 mJ VDD=-25V, VGS=-10V, L=0.5mH, ID=-28.3A 1
Storage Temperature Range TSTG -55 150 1
Operating Junction Temperature Range TJ 150 1
Junction-to-Ambient (Steady-State) RθJA 55 /W 1
Junction-to-Case RθJC 1.6 /W 1

CAD (KiCad official)

  • Symbol: CMSA120P03A
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa120p03a-etched.step / cmsa120p03a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa120p03a.step / cmsa120p03a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256 0260e14cdbce560d, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF