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CMSA100P04

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Cmos(广东场效应半导体) MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMSA100P04

Cmos(广东场效应半导体) · MOSFETs · DFN-8(5x6)

CMSA100P04 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, rated with VDS of -40 V and continuous drain current of -100 A at TC=25℃ per the absolute maximum ratings.
2 S passive Source terminal of the P-channel MOSFET, sharing the same -40 V VDS and -100 A continuous current ratings as the device.
3 S passive Source terminal of the P-channel MOSFET, sharing the same -40 V VDS and -100 A continuous current ratings as the device.
4 G input Gate terminal with VGS rated at ±20 V absolute maximum and VGS(th) of -1.0 V to -2.5 V at ID=-250uA.
5 D passive Drain terminal of the P-channel MOSFET, rated at VDS of -40 V with continuous drain current of -100 A at TC=25℃.
6 D passive Drain terminal of the P-channel MOSFET, sharing the same -40 V VDS and -100 A continuous current ratings as the device.
7 D passive Drain terminal of the P-channel MOSFET, sharing the same -40 V VDS and -100 A continuous current ratings as the device.
8 D passive Drain terminal of the P-channel MOSFET, sharing the same -40 V VDS and -100 A continuous current ratings as the device.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM -300 A 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Total Power Dissipation PD 120 W TC=25℃ 1
Single Pulse Avalanche Energy EAS 595 mJ VDD=-30V, VGS=-10V, L=1mH, IAS=-34.5A (Note 1) 1
Continuous Drain Current ID -100 A TC=25℃ 1
Continuous Drain Current ID -70 A TC=100℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W minimal footprint 1
Thermal Resistance Junction-case RθJC 1.04 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 5.8 6.6 mΩ VGS=-10V, ID=-20A 2
Static Drain-Source On-Resistance RDS(ON) 7 7.8 mΩ VGS=-4.5V, ID=-20A 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-32V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -100 A 2
Pulsed Source Current ISM -300 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -0.84 -1.3 V VGS=0V, IF=-28A 2

CAD (KiCad official)

  • Symbol: CMSA100P04
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa100p04-etched.step / cmsa100p04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa100p04.step / cmsa100p04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (5 pp, sha256 4e9b9bae4418941c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF