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CMSA046N10A

Public Made by Adom

by adom

Cmos MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMSA046N10A

Cmos · MOSFETs · DFN-8(5x6)

CMSA046N10A from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 100V N-channel MOSFET, carrying the source current of the device (continuous drain current is rated 100 A at TC=25℃).
2 S passive Source terminal of the 100V N-channel MOSFET, carrying the source current of the device (continuous drain current is rated 100 A at TC=25℃).
3 S passive Source terminal of the 100V N-channel MOSFET, carrying the source current of the device (continuous drain current is rated 100 A at TC=25℃).
4 G input Gate terminal of the MOSFET; the datasheet rates the gate-source voltage at ±20 V.
5 D passive Drain terminal of the MOSFET; the datasheet rates the drain-source voltage at 100 V and the pulsed drain current at 400 A.
6 D passive Drain terminal of the MOSFET; the datasheet rates the drain-source voltage at 100 V and the pulsed drain current at 400 A.
7 D passive Drain terminal of the MOSFET; the datasheet rates the drain-source voltage at 100 V and the pulsed drain current at 400 A.
8 D passive Drain terminal of the MOSFET; the datasheet rates the drain-source voltage at 100 V and the pulsed drain current at 400 A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 400 A 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Single Pulse Avalanche Energy EAS 533 533 mJ VDS=50V, VGS=10V, L=0.5mH, IAS=46.2A (note 1) 1
Total Power Dissipation PD 150 W TC=25℃ 1
Continuous Drain Current ID 100 A TC=25℃ 1
Continuous Drain Current ID 80 A TC=100℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 55 ℃/W min. footprint 1
Thermal Resistance, Junction-to-Case RθJC 0.83 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.6 mΩ VGS=10V, ID=28A 2
Static Drain-Source On-Resistance RDS(ON) 4.6 7 mΩ VGS=6V, ID=25A 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 μA VDS=100V, VGS=0V 2
Drain-Source Leakage Current IDSS 100 μA VDS=100V, VGS=0V, TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 100 A 2
Pulsed Source Current ISM 400 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 0.81 1.4 V VGS=0V, IF=20A, Tj=25℃ 2

CAD (KiCad official)

  • Symbol: CMSA046N10A
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa046n10a-etched.step / cmsa046n10a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa046n10a.step / cmsa046n10a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (5 pp, sha256 48ab1dd1a3c41e3c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF