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CMSA012N06

Cmos · MOSFETs · DFN-8(5x6)

CMSA012N06 from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, pin 1 end of the package, with continuous drain current rated 30 A at TC=25°C.
2 S passive Source terminal of the N-channel MOSFET, tied to the source net with pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET, tied to the source net with pins 1 and 2.
4 G input Gate terminal, with a gate-source voltage rating of ±20 V and a gate threshold voltage VGS(th) of 1.0 V min to 3.0 V max.
5 D passive Drain terminal, with a drain-source voltage rating of 60 V and a pulsed drain current of 90 A.
6 D passive Drain terminal, tied to the drain net with pins 5, 7 and 8, with a drain-source voltage rating of 60 V.
7 D passive Drain terminal, tied to the drain net with pins 5, 6 and 8, with a drain-source voltage rating of 60 V.
8 D passive Drain terminal, tied to the drain net with pins 5, 6 and 7, with a drain-source voltage rating of 60 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Drain-Source Voltage VDS 60 V 1
Continuous Drain Current ID 30 A TC=25℃ 1
Pulsed Drain Current IDM 90 A 1
Total Power Dissipation PD 40 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Single Pulse Avalanche Energy EAS 45 mJ 1
Thermal Resistance Junction-to-Ambient RθJA 55 ℃/ W 1
Thermal Resistance Junction-to-Case RθJC 3.3 ℃/ W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 9.6 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 17.5 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=60V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS ±20V, VDS=0V 2
Diode continuous forward current IS 30 A 2
Pulsed Source Current ISM 90 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=28A, Tj=25℃ 2

CAD (KiCad official)

  • Symbol: CMSA012N06
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa012n06-etched.step / cmsa012n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa012n06.step / cmsa012n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (2 pp, sha256 7436260c4e24bb1f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF