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CMS9926A

Public Made by Adom

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Cmos(广东场效应半导体) , SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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CMS9926A

Cmos(广东场效应半导体) · IC · SOP-8

CMS9926A from Cmos(广东场效应半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel); VDS rated 20V and continuous drain current 6.5A at TA=25°C per device.
2 G1 input Gate of MOSFET 1 with VGS rated ±10V and threshold 0.5V to 1.0V at ID=250μA.
3 S2 passive Source of MOSFET 2 (N-channel); VDS rated 20V and continuous drain current 6.5A at TA=25°C per device.
4 G2 input Gate of MOSFET 2 with VGS rated ±10V and threshold 0.5V to 1.0V at ID=250μA.
5 D2 passive Drain of MOSFET 2, tied internally with pin 6; RDS(ON) 19mΩ max at VGS=4.5V, ID=6A.
6 D2 passive Drain of MOSFET 2, tied internally with pin 5; pulsed drain current up to 30A.
7 D1 passive Drain of MOSFET 1, tied internally with pin 8; RDS(ON) 19mΩ max at VGS=4.5V, ID=6A.
8 D1 passive Drain of MOSFET 1, tied internally with pin 7; pulsed drain current up to 30A.

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package SOP-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 15 19 mΩ VGS=4.5V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 19 25 mΩ VGS=2.5V, ID=5.2A 2
Gate Threshold Voltage VGS(th) 0.5 1 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS = ±10V, VDS=0V 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1.7A 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -10 10 V 1
Continuous Drain Current ID@TA=25℃ 6.5 A 1
Continuous Drain Current ID@TA=70℃ 5 A 1
Pulsed Drain Current IDM 30 A 1
Single Pulse Avalanche Energy EAS 16 mJ Note 1: VDD=15V, VGS=10V, L=0.5mH, IAS=8A 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W t≤10sec 1

CAD (KiCad official)

  • Symbol: CMS9926A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cms9926a-etched.step / cms9926a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cms9926a.step / cms9926a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256 627d31ee2eb6de8d, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF