component
CMS8447B
Public Made by Adomby adom
Cmos MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMS8447B
Cmos · MOSFETs · SOP-8
CMS8447B from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pin 1, marked by the Pin 1 arrow); VDS max 40V, ID 11A continuous at TC=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, connected in parallel with the other source pins; ID 11A continuous, 33A pulsed. |
| 3 | S | passive | Source of the N-channel MOSFET, connected in parallel with the other source pins; ID 11A continuous, 33A pulsed. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS max ±20V, RDS(on) max 23mΩ at VGS=10V and 27mΩ at VGS=4.5V. |
| 5 | D | passive | Drain of the N-channel MOSFET; VDS max 40V, connected with the other drain pins. |
| 6 | D | passive | Drain of the N-channel MOSFET; VDS max 40V, connected with the other drain pins. |
| 7 | D | passive | Drain of the N-channel MOSFET; VDS max 40V, connected with the other drain pins. |
| 8 | D | passive | Drain of the N-channel MOSFET; VDS max 40V, connected with the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 11 | A | TC=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 33 | A | 1 | |||
| Total Power Dissipation | PD | 2.5 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | 1 | |||
| Thermal Resistance Junction-Lead | RθJL | 20 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 23 | mΩ | VGS=10V, ID=11A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 27 | mΩ | VGS=4.5V, ID=8A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=32V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=3A | 2 |
CAD (KiCad official)
- Symbol:
CMS8447B - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cms8447b-etched.step/cms8447b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cms8447b.step/cms8447b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
f1ba0617e8dd3e38, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMS8447B
**Cmos** · MOSFETs · SOP-8
CMS8447B from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pin 1, marked by the Pin 1 arrow); VDS max 40V, ID 11A continuous at TC=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, connected in parallel with the other source pins; ID 11A continuous, 33A pulsed. |
| 3 | S | passive | Source of the N-channel MOSFET, connected in parallel with the other source pins; ID 11A continuous, 33A pulsed. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS max ±20V, RDS(on) max 23mΩ at VGS=10V and 27mΩ at VGS=4.5V. |
| 5 | D | passive | Drain of the N-channel MOSFET; VDS max 40V, connected with the other drain pins. |
| 6 | D | passive | Drain of the N-channel MOSFET; VDS max 40V, connected with the other drain pins. |
| 7 | D | passive | Drain of the N-channel MOSFET; VDS max 40V, connected with the other drain pins. |
| 8 | D | passive | Drain of the N-channel MOSFET; VDS max 40V, connected with the other drain pins. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 11 | A | TC=25℃ | 1 |
| Pulsed Drain Current | IDM | | | 33 | A | | 1 |
| Total Power Dissipation | PD | | | 2.5 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 50 | ℃/W | | 1 |
| Thermal Resistance Junction-Lead | RθJL | | | 20 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 23 | mΩ | VGS=10V, ID=11A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 27 | mΩ | VGS=4.5V, ID=8A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=32V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=3A | 2 |
## CAD (KiCad official)
- Symbol: `CMS8447B`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cms8447b-etched.step` / `cms8447b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cms8447b.step` / `cms8447b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590457050187792384) (2 pp, sha256 `f1ba0617e8dd3e38`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cms8447b-datasheet.pdf)