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CMS8125B

Public Made by Adom

by adom

Cmos(广东场效应半导体) , SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMS8125B

Cmos(广东场效应半导体) · IC · SOP-8

CMS8125B from Cmos(广东场效应半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; pins 1-3 are source.
2 S passive Source terminal of the P-channel MOSFET; pins 1-3 are source.
3 S passive Source terminal of the P-channel MOSFET; pins 1-3 are source.
4 G input Gate terminal; gate-source voltage limited to ±20 V with threshold of -1 to -2.5 V.
5 D passive Drain terminal; drain-source voltage rated -25 V, continuous drain current -18 A.
6 D passive Drain terminal; drain-source voltage rated -25 V, continuous drain current -18 A.
7 D passive Drain terminal; drain-source voltage rated -25 V, continuous drain current -18 A.
8 D passive Drain terminal; drain-source voltage rated -25 V, continuous drain current -18 A.

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package SOP-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -25 V VGS=0V, ID=-250μA 2
Static Drain-Source On-Resistance RDS(ON) 7 mΩ VGS=-10V, ID=-15A 2
Static Drain-Source On-Resistance RDS(ON) 9 mΩ VGS=-4.5V, ID=-12A 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=-250μA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-30V, VGS=0V 2
Diode Forward Voltage VSD -1.2 V VGS=0V, ISD=-1A 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Total Gate Charge Qg 160 nC VDS=-15V, VGS=-10V, ID=-18A 2
Gate-Drain Charge Qgd 40 nC VDS=-15V, VGS=-10V, ID=-18A 2
Turn-On Delay Time Td(on) 10 ns VDS=-15V, VGS=-10V, RL=1.7Ω 2
Rise Time Tr 20 ns VDS=-15V, VGS=-10V, RL=1.7Ω 2
Turn-Off Delay Time Td(off) 275 ns VDS=-15V, VGS=-10V, RL=1.7Ω 2
Fall Time Tf 780 ns VDS=-15V, VGS=-10V, RL=1.7Ω 2
Input Capacitance Ciss 7000 pF VDS=-10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 755 pF VDS=-10V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 564 pF VDS=-10V, VGS=0V, f=1MHz 2
Forward Transconductance gfs 30 S VDS=-5V, ID=-5A 2
Gate Resistance Rg 50 Ω VDS=0V, VGS=0V, f=1MHz 2
Drain-Source Voltage VDS -25 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -18 A 1
Pulsed Drain Current IDM -50 A 1
Continuous Drain Current ID -15 A TC=100℃ 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 65.8 ℃/W 1

CAD (KiCad official)

  • Symbol: CMS8125B
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cms8125b-etched.step / cms8125b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cms8125b.step / cms8125b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (2 pp, sha256 8f1d845b2b748ba9, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF