component
CMS4606B
Public Made by Adomby adom
Cmos MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMS4606B
Cmos · MOSFETs · SOP-8
CMS4606B from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS 30V, ID 6A). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS max ±20V). |
| 3 | S2 | passive | Source of the P-channel MOSFET (VDS -30V, ID -6.5A). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGS max ±20V). |
| 5 | D2 | passive | Drain of the P-channel MOSFET (VDS -30V, ID -6.5A), shorted with pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (VDS -30V, ID -6.5A), shorted with pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (VDS 30V, ID 6A), shorted with pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (VDS 30V, ID 6A), shorted with pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-channel Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| N-channel Static Drain-Source On-Resistance | RDS(ON) | 22 | mΩ | VGS=10V, ID=6A | 2 | ||
| N-channel Static Drain-Source On-Resistance | RDS(ON) | 34 | mΩ | VGS=4.5V, ID=5A | 2 | ||
| N-channel Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250μA | 2 | |
| N-channel Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V | 2 | ||
| N-channel Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| N-channel Continuous Source Current | IS | 6 | A | 2 | |||
| N-channel Pulsed Source Current | ISM | 18 | A | VG=VD=0V, Force Current | 2 | ||
| N-channel Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A | 2 | ||
| P-channel Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250μA | 3 | ||
| P-channel Static Drain-Source On-Resistance | RDS(ON) | 40 | mΩ | VGS=-10V, ID=-4A | 3 | ||
| P-channel Static Drain-Source On-Resistance | RDS(ON) | 60 | mΩ | VGS=-4.5V, ID=-3A | 3 | ||
| P-channel Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250μA | 3 | |
| P-channel Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V | 3 | ||
| P-channel Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| P-channel Continuous Source Current | IS | 6.5 | A | 3 | |||
| P-channel Pulsed Source Current | ISM | 20 | A | VG=VD=0V, Force Current | 3 | ||
| P-channel Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A | 3 | ||
| N-channel Drain-Source Voltage | VDS | 30 | V | 1 | |||
| N-channel Continuous Drain Current | ID | 6 | A | 1 | |||
| N-channel Continuous Drain Current | ID | 5 | A | @TC=70℃ | 1 | ||
| N-channel Pulsed Drain Current | IDM | 18 | A | 1 | |||
| N-channel Single Pulse Avalanche Energy | EAS | 20 | mJ | 1 | |||
| P-channel Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-channel Continuous Drain Current | ID | -6.5 | A | @TC=25℃ | 1 | ||
| P-channel Continuous Drain Current | ID | -5.3 | A | @TC=70℃ | 1 | ||
| P-channel Pulsed Drain Current | IDM | -20 | A | 1 | |||
| P-channel Single Pulse Avalanche Energy | EAS | 35 | mJ | 1 | |||
| Total Power Dissipation | PD | 2 | W | @TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 62.5 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CMS4606B - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cms4606b-etched.step/cms4606b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cms4606b.step/cms4606b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (3 pp, sha256
201658c2fb7cc99c, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMS4606B
**Cmos** · MOSFETs · SOP-8
CMS4606B from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS 30V, ID 6A). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS max ±20V). |
| 3 | S2 | passive | Source of the P-channel MOSFET (VDS -30V, ID -6.5A). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGS max ±20V). |
| 5 | D2 | passive | Drain of the P-channel MOSFET (VDS -30V, ID -6.5A), shorted with pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (VDS -30V, ID -6.5A), shorted with pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (VDS 30V, ID 6A), shorted with pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (VDS 30V, ID 6A), shorted with pin 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-channel Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250μA | 2 |
| N-channel Static Drain-Source On-Resistance | RDS(ON) | | | 22 | mΩ | VGS=10V, ID=6A | 2 |
| N-channel Static Drain-Source On-Resistance | RDS(ON) | | | 34 | mΩ | VGS=4.5V, ID=5A | 2 |
| N-channel Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| N-channel Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V | 2 |
| N-channel Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| N-channel Continuous Source Current | IS | | | 6 | A | | 2 |
| N-channel Pulsed Source Current | ISM | | | 18 | A | VG=VD=0V, Force Current | 2 |
| N-channel Diode Forward Voltage | VSD | | | 1 | V | VGS=0V, IS=1A | 2 |
| P-channel Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250μA | 3 |
| P-channel Static Drain-Source On-Resistance | RDS(ON) | | | 40 | mΩ | VGS=-10V, ID=-4A | 3 |
| P-channel Static Drain-Source On-Resistance | RDS(ON) | | | 60 | mΩ | VGS=-4.5V, ID=-3A | 3 |
| P-channel Gate Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VGS=VDS, ID=-250μA | 3 |
| P-channel Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-24V, VGS=0V | 3 |
| P-channel Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-channel Continuous Source Current | IS | | | 6.5 | A | | 3 |
| P-channel Pulsed Source Current | ISM | | | 20 | A | VG=VD=0V, Force Current | 3 |
| P-channel Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A | 3 |
| N-channel Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| N-channel Continuous Drain Current | ID | | | 6 | A | | 1 |
| N-channel Continuous Drain Current | ID | | | 5 | A | @TC=70℃ | 1 |
| N-channel Pulsed Drain Current | IDM | | | 18 | A | | 1 |
| N-channel Single Pulse Avalanche Energy | EAS | | | 20 | mJ | | 1 |
| P-channel Drain-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| P-channel Continuous Drain Current | ID | | | -6.5 | A | @TC=25℃ | 1 |
| P-channel Continuous Drain Current | ID | | | -5.3 | A | @TC=70℃ | 1 |
| P-channel Pulsed Drain Current | IDM | | | -20 | A | | 1 |
| P-channel Single Pulse Avalanche Energy | EAS | | | 35 | mJ | | 1 |
| Total Power Dissipation | PD | | | 2 | W | @TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | | | 62.5 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `CMS4606B`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cms4606b-etched.step` / `cms4606b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cms4606b.step` / `cms4606b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos datasheet](docs/cms4606b-datasheet.pdf) (3 pp, sha256 `201658c2fb7cc99c`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cms4606b-datasheet.pdf)