component
CMS4576
Public Made by Adomby adom
Cmos MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Ray
Publish 0.1.0
0249a22
CMS4576
Cmos · MOSFETs · SOP-8
CMS4576 from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated 20 A. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is rated 20 A. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2; continuous drain current is rated 20 A. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V with threshold of 1 V to 2.5 V at 250 µA. |
| 5 | D | passive | Drain of the MOSFET, tied with pins 6-8; drain-source voltage is rated 30 V. |
| 6 | D | passive | Drain of the MOSFET, tied with pins 5, 7 and 8; drain-source voltage is rated 30 V. |
| 7 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 8; drain-source voltage is rated 30 V. |
| 8 | D | passive | Drain of the MOSFET, tied with pins 5-7; drain-source voltage is rated 30 V, pulsed drain current 60 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6 | mΩ | VGS=10V, ID=20A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 10 | mΩ | VGS=4.5V, ID=20A | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250μA | 2 | |
| Continuous Source Current | IS | 20 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 60 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=15A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Continuous Drain Current | ID | 20 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100 | 12 | A | TC=100 | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 35 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25 | 3.1 | W | TC=25 | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 40 | ℃/W | t ≤ 10s | 1 | ||
| Total Gate Charge (4.5V) | Qg | 16 | nC | VDS=15V, VGS=10V, ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 3.5 | nC | VDS=15V, VGS=10V, ID=20A | 2 | ||
| Turn-On Delay Time | Td(on) | 6.25 | ns | VDS=15V, VGS=10V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Rise Time | Tr | 2.5 | ns | VDS=15V, VGS=10V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 19 | ns | VDS=15V, VGS=10V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Fall Time | Tf | 5 | ns | VDS=15V, VGS=10V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Input Capacitance | Ciss | 950 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 370 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 65 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Forward Transconductance | gfs | 13 | S | VDS=5V, ID=5A | 2 | ||
| Gate Resistance | Rg | 2 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
CMS4576 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cms4576-etched.step/cms4576-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cms4576.step/cms4576.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
9e39a2c7f8390efb, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMS4576
**Cmos** · MOSFETs · SOP-8
CMS4576 from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated 20 A. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is rated 20 A. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2; continuous drain current is rated 20 A. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V with threshold of 1 V to 2.5 V at 250 µA. |
| 5 | D | passive | Drain of the MOSFET, tied with pins 6-8; drain-source voltage is rated 30 V. |
| 6 | D | passive | Drain of the MOSFET, tied with pins 5, 7 and 8; drain-source voltage is rated 30 V. |
| 7 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 8; drain-source voltage is rated 30 V. |
| 8 | D | passive | Drain of the MOSFET, tied with pins 5-7; drain-source voltage is rated 30 V, pulsed drain current 60 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 6 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 10 | mΩ | VGS=4.5V, ID=20A | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Continuous Source Current | IS | | | 20 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 60 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=15A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 20 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID@TC=100 | | | 12 | A | TC=100 | 1 |
| Pulsed Drain Current | IDM | | | 60 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 35 | mJ | | 1 |
| Total Power Dissipation | PD@TC=25 | | | 3.1 | W | TC=25 | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 40 | ℃/W | t ≤ 10s | 1 |
| Total Gate Charge (4.5V) | Qg | | 16 | | nC | VDS=15V, VGS=10V, ID=20A | 2 |
| Gate-Drain Charge | Qgd | | 3.5 | | nC | VDS=15V, VGS=10V, ID=20A | 2 |
| Turn-On Delay Time | Td(on) | | 6.25 | | ns | VDS=15V, VGS=10V, RL=0.75Ω, RGEN=3Ω | 2 |
| Rise Time | Tr | | 2.5 | | ns | VDS=15V, VGS=10V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 19 | | ns | VDS=15V, VGS=10V, RL=0.75Ω, RGEN=3Ω | 2 |
| Fall Time | Tf | | 5 | | ns | VDS=15V, VGS=10V, RL=0.75Ω, RGEN=3Ω | 2 |
| Input Capacitance | Ciss | | 950 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 370 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 65 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Forward Transconductance | gfs | | 13 | | S | VDS=5V, ID=5A | 2 |
| Gate Resistance | Rg | | 2 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `CMS4576`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cms4576-etched.step` / `cms4576-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cms4576.step` / `cms4576.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos datasheet](docs/cms4576-datasheet.pdf) (2 pp, sha256 `9e39a2c7f8390efb`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cms4576-datasheet.pdf)