component
CMS4468
Public Made by Adomby adom
Cmos MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMS4468
Cmos · MOSFETs · SOP-8
CMS4468 from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, with the pin 1 marker at the S end of the bottom row (S S S G). |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the same source as pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the same source as pins 1 and 2. |
| 4 | G | input | Gate, rated at ±20 V VGS maximum, with RDS(ON) ≤15 mΩ at VGS=10 V and ≤20 mΩ at VGS=4.5 V. |
| 5 | D | passive | Drain, rated at 30 V VDS maximum and 12 A continuous (36 A pulsed), common with pins 6 to 8. |
| 6 | D | passive | Drain, rated at 30 V VDS maximum and 12 A continuous (36 A pulsed), common with pins 5, 7 and 8. |
| 7 | D | passive | Drain, rated at 30 V VDS maximum and 12 A continuous (36 A pulsed), common with pins 5, 6 and 8. |
| 8 | D | passive | Drain, rated at 30 V VDS maximum and 12 A continuous (36 A pulsed), common with pins 5 to 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 15 | mΩ | VGS=10V, ID=12A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 20 | mΩ | VGS=4.5V, ID=10A | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250μA | 2 | |
| Continuous Source Current | IS | 12 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 36 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IF=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Continuous Drain Current | ID | 12 | A | TA=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 3 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | TA=25℃ | 1 | |
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | TA=25℃ | 1 | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 75 | ℃/W | 1 | |||
| Forward Transconductance | gfs | 3 | S | VDS=5V, ID=12A | 2 | ||
| Gate Resistance | Rg | 4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 18 | nC | VDS=15V, VGS=10V, ID=12A | 2 | ||
| Turn-On Delay Time | Td(on) | 5 | ns | VDS=15V, VGS=10V, RL=1.3Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 20 | ns | VDS=15V, VGS=10V, RL=1.3Ω, RGEN=3Ω | 2 | ||
| Fall Time | Tf | 5 | ns | VDS=15V, VGS=10V, RL=1.3Ω, RGEN=3Ω | 2 | ||
| Input Capacitance | Ciss | 800 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 146 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 115 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 20 | ns | IF=12A, dI/dt=100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 10 | nC | IF=12A, dI/dt=100A/μs | 2 |
CAD (KiCad official)
- Symbol:
CMS4468 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cms4468-etched.step/cms4468-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cms4468.step/cms4468.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
1f16fbce8141c9a1, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMS4468
**Cmos** · MOSFETs · SOP-8
CMS4468 from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, with the pin 1 marker at the S end of the bottom row (S S S G). |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the same source as pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the same source as pins 1 and 2. |
| 4 | G | input | Gate, rated at ±20 V VGS maximum, with RDS(ON) ≤15 mΩ at VGS=10 V and ≤20 mΩ at VGS=4.5 V. |
| 5 | D | passive | Drain, rated at 30 V VDS maximum and 12 A continuous (36 A pulsed), common with pins 6 to 8. |
| 6 | D | passive | Drain, rated at 30 V VDS maximum and 12 A continuous (36 A pulsed), common with pins 5, 7 and 8. |
| 7 | D | passive | Drain, rated at 30 V VDS maximum and 12 A continuous (36 A pulsed), common with pins 5, 6 and 8. |
| 8 | D | passive | Drain, rated at 30 V VDS maximum and 12 A continuous (36 A pulsed), common with pins 5 to 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 15 | mΩ | VGS=10V, ID=12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 20 | mΩ | VGS=4.5V, ID=10A | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Continuous Source Current | IS | | | 12 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 36 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | VGS=0V, IF=1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 12 | A | TA=25℃ | 1 |
| Pulsed Drain Current | IDM | | | 36 | A | TA=25℃ | 1 |
| Total Power Dissipation | PD | | | 3 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | TA=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | TA=25℃ | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 75 | ℃/W | | 1 |
| Forward Transconductance | gfs | | 3 | | S | VDS=5V, ID=12A | 2 |
| Gate Resistance | Rg | | 4 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 18 | | nC | VDS=15V, VGS=10V, ID=12A | 2 |
| Turn-On Delay Time | Td(on) | | 5 | | ns | VDS=15V, VGS=10V, RL=1.3Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 20 | | ns | VDS=15V, VGS=10V, RL=1.3Ω, RGEN=3Ω | 2 |
| Fall Time | Tf | | 5 | | ns | VDS=15V, VGS=10V, RL=1.3Ω, RGEN=3Ω | 2 |
| Input Capacitance | Ciss | | 800 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 146 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 115 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Recovery Time | trr | | 20 | | ns | IF=12A, dI/dt=100A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 10 | | nC | IF=12A, dI/dt=100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `CMS4468`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cms4468-etched.step` / `cms4468-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cms4468.step` / `cms4468.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos datasheet](docs/cms4468-datasheet.pdf) (2 pp, sha256 `1f16fbce8141c9a1`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cms4468-datasheet.pdf)