component
CMS4410M
Public Made by Adomby adom
Cmos(广东场效应半导体) , SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
| viewers | 3d ago |
| cms4410m-etched.glb | 3d ago |
| cms4410m-etched.step | 3d ago |
| cms4410m-hero.glb | 3d ago |
| cms4410m-hero.overlay.json | 3d ago |
| cms4410m.glb | 3d ago |
| cms4410m.kicad_mod | 3d ago |
| cms4410m.kicad_sym | 3d ago |
| cms4410m.lbr | 3d ago |
| cms4410m.step | 3d ago |
| package.json | 3d ago |
| page.json | 3d ago |
| README.md | 3d ago |
CMS4410M
Cmos(广东场效应半导体) · IC · SOP-8
CMS4410M from Cmos(广东场效应半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit, and the device is rated 30 V VDS and 12.5 A continuous drain current. |
| 2 | S | passive | Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit, and the device is rated 30 V VDS and 12.5 A continuous drain current. |
| 3 | S | passive | Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit, and the device is rated 30 V VDS and 12.5 A continuous drain current. |
| 4 | G | input | Gate terminal of the MOSFET; the gate-source voltage is rated ±20 V (VGS), with a gate threshold of 1 V to 2.5 V at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the MOSFET; drain-source breakdown voltage is 30 V minimum at VGS = 0 V, ID = 250 µA. |
| 6 | D | passive | Drain terminal of the MOSFET; drain-source breakdown voltage is 30 V minimum at VGS = 0 V, ID = 250 µA. |
| 7 | D | passive | Drain terminal of the MOSFET; drain-source breakdown voltage is 30 V minimum at VGS = 0 V, ID = 250 µA. |
| 8 | D | passive | Drain terminal of the MOSFET; drain-source breakdown voltage is 30 V minimum at VGS = 0 V, ID = 250 µA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOP-8 |
| Category | |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 12.5 | A | 1 | |||
| Continuous Drain Current | ID | 8.8 | A | TA=75℃ | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Total Power Dissipation | PD | 3 | W | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 117 | mJ | VDS=25V, VGS=10V, L=1.5mH, IAS=12.5A (note 1) | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | at 10 seconds | 1 | ||
| Thermal Resistance Junction-case | RθJC | 25 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 8.2 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=4.5V, ID=8A | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250μA | 2 | |
| Continuous Source Current | IS | 12.5 | A | 2 | |||
| Pulsed Source Current | ISM | 50 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.84 | 1.2 | V | VGS=0V, IF=10A, TJ=25℃ | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3. RθJA is measured with 1.0 in2 copper on FR-4 board. | 2 |
CAD (KiCad official)
- Symbol:
CMS4410M - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cms4410m-etched.step/cms4410m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cms4410m.step/cms4410m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
188b2cfa2be75346, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).