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CMS4410M

Cmos(广东场效应半导体) · IC · SOP-8

CMS4410M from Cmos(广东场效应半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit, and the device is rated 30 V VDS and 12.5 A continuous drain current.
2 S passive Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit, and the device is rated 30 V VDS and 12.5 A continuous drain current.
3 S passive Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific limit, and the device is rated 30 V VDS and 12.5 A continuous drain current.
4 G input Gate terminal of the MOSFET; the gate-source voltage is rated ±20 V (VGS), with a gate threshold of 1 V to 2.5 V at ID = 250 µA.
5 D passive Drain terminal of the MOSFET; drain-source breakdown voltage is 30 V minimum at VGS = 0 V, ID = 250 µA.
6 D passive Drain terminal of the MOSFET; drain-source breakdown voltage is 30 V minimum at VGS = 0 V, ID = 250 µA.
7 D passive Drain terminal of the MOSFET; drain-source breakdown voltage is 30 V minimum at VGS = 0 V, ID = 250 µA.
8 D passive Drain terminal of the MOSFET; drain-source breakdown voltage is 30 V minimum at VGS = 0 V, ID = 250 µA.

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package SOP-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 12.5 A 1
Continuous Drain Current ID 8.8 A TA=75℃ 1
Pulsed Drain Current IDM 50 A 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Total Power Dissipation PD 3 W TC=25℃ 1
Single Pulse Avalanche Energy EAS 117 mJ VDS=25V, VGS=10V, L=1.5mH, IAS=12.5A (note 1) 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W at 10 seconds 1
Thermal Resistance Junction-case RθJC 25 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 7 8.2 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 11 15 mΩ VGS=4.5V, ID=8A 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS = ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 2.5 V VGS=VDS, ID=250μA 2
Continuous Source Current IS 12.5 A 2
Pulsed Source Current ISM 50 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 0.84 1.2 V VGS=0V, IF=10A, TJ=25℃ 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3. RθJA is measured with 1.0 in2 copper on FR-4 board. 2

CAD (KiCad official)

  • Symbol: CMS4410M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cms4410m-etched.step / cms4410m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cms4410m.step / cms4410m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256 188b2cfa2be75346, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF