component
CMS120N080B
Public Made by Adomby adom
Bruckewell Silicon Carbide Field Effect Transistor (MOSFET), TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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CMS120N080B
Bruckewell · Silicon Carbide Field Effect Transistor (MOSFET) · TO-263-7
CMS120N080B from Bruckewell, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated -5 V to 20 V, threshold 2.0 V min to 4.0 V max at VDS=VGS, ID=10 mA. |
| 2 | DS | passive | Driver Source (Kelvin source return for the gate drive), connected to the MOSFET source internally. |
| 3 | S | passive | Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C. |
| 4 | S | passive | Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C. |
| 5 | S | passive | Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C. |
| 6 | S | passive | Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C. |
| 7 | S | passive | Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bruckewell |
| Package | TO-263-7 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS=VGS, ID=10mA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 1200 | V | VGS=0V, ID=1mA | 2 | ||
| Gate-Source Leakage Current (+) | IGSS+ | 0.1 | 100 | nA | VDS=0V, VGS=20V | 2 | |
| Gate-Source Leakage Current (-) | IGSS- | -100 | nA | VDS=0V, VGS=-5V | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=1200V, VGS=0V | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 77 | 100 | mΩ | VGS=20V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 71 | 90 | mΩ | VGS=20V, ID=10A | 2 | |
| Maximum Continuous Diode Forward Current | IS | 43 | A | VGS=-5 V, TC=25 °C | 3 | ||
| Drain-Source Voltage | VDS | 1200 | V | 2 | |||
| Gate-Source Voltage | VGS | -5 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 35 | A | TC=25°C | 2 | ||
| Continuous Drain Current | ID | 25 | A | TC=100°C | 2 | ||
| Pulsed Drain Current | ID,pulse | 80 | A | 2 | |||
| Power Dissipation | Ptot | 188 | W | TC=25°C | 2 | ||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | IAS=20A, V=50V, L=1mH | 2 | ||
| Operating Junction and Storage Temperature | TJ/TSTG | -55 | 175 | °C | 2 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 40 | °C/W | 2 | |||
| Maximum Junction-to-Case Thermal Resistance | RθJC | 0.8 | °C/W | 2 | |||
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=1200V, VGS=0V, TJ=175°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 106 | mΩ | VGS=20V, ID=20A, TJ=125°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 134 | mΩ | VGS=20V, ID=20A, TJ=175°C | 2 | ||
| Gate Input Resistance | Rg | 3 | Ω | f=1MHz, VAC=25mV, D-S short | 2 | ||
| Total Gate Charge | Qg | 61 | nC | VDD=800 V, IDS=20 A, VGS=-5/20V | 3 | ||
| Gate-Source Charge | Qgs | 24 | nC | VDD=800 V, IDS=20 A, VGS=-5/20V | 3 | ||
| Gate-Drain Charge | Qgd | 14 | nC | VDD=800 V, IDS=20 A, VGS=-5/20V | 3 | ||
| Input Capacitance | CISS | 1377 | pF | VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV | 3 | ||
| Output Capacitance | COSS | 62 | pF | VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV | 3 | ||
| Reverse Transfer Capacitance | CRSS | 4 | pF | VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV | 3 | ||
| Diode Forward Voltage | VSD | 3.8 | V | VGS=-5 V, IS=10 A | 3 |
CAD (KiCad official)
- Symbol:
CMS120N080B - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin8 - 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files:
cms120n080b-etched.step/cms120n080b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cms120n080b.step/cms120n080b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bruckewell datasheet (9 pp, sha256
1368cb13ad780924, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).