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CMS120N080B

Bruckewell · Silicon Carbide Field Effect Transistor (MOSFET) · TO-263-7

CMS120N080B from Bruckewell, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated -5 V to 20 V, threshold 2.0 V min to 4.0 V max at VDS=VGS, ID=10 mA.
2 DS passive Driver Source (Kelvin source return for the gate drive), connected to the MOSFET source internally.
3 S passive Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C.
4 S passive Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C.
5 S passive Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C.
6 S passive Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C.
7 S passive Source; continuous drain current 35 A at TC=25°C, 25 A at TC=100°C.
8 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Bruckewell
Package TO-263-7
Category Silicon Carbide (SiC) Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) 2 2.8 4 V VDS=VGS, ID=10mA 2
Drain-Source Breakdown Voltage BVDSS 1200 V VGS=0V, ID=1mA 2
Gate-Source Leakage Current (+) IGSS+ 0.1 100 nA VDS=0V, VGS=20V 2
Gate-Source Leakage Current (-) IGSS- -100 nA VDS=0V, VGS=-5V 2
Drain-Source Leakage Current IDSS 1 μA VDS=1200V, VGS=0V 2
Static Drain-Source On-Resistance RDS(on) 77 100 mΩ VGS=20V, ID=20A 2
Static Drain-Source On-Resistance RDS(on) 71 90 mΩ VGS=20V, ID=10A 2
Maximum Continuous Diode Forward Current IS 43 A VGS=-5 V, TC=25 °C 3
Drain-Source Voltage VDS 1200 V 2
Gate-Source Voltage VGS -5 20 V 2
Continuous Drain Current ID 35 A TC=25°C 2
Continuous Drain Current ID 25 A TC=100°C 2
Pulsed Drain Current ID,pulse 80 A 2
Power Dissipation Ptot 188 W TC=25°C 2
Single Pulse Avalanche Energy EAS 200 mJ IAS=20A, V=50V, L=1mH 2
Operating Junction and Storage Temperature TJ/TSTG -55 175 °C 2
Maximum Junction-to-Ambient Thermal Resistance RθJA 40 °C/W 2
Maximum Junction-to-Case Thermal Resistance RθJC 0.8 °C/W 2
Drain-Source Leakage Current IDSS 1 μA VDS=1200V, VGS=0V, TJ=175°C 2
Static Drain-Source On-Resistance RDS(on) 106 mΩ VGS=20V, ID=20A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(on) 134 mΩ VGS=20V, ID=20A, TJ=175°C 2
Gate Input Resistance Rg 3 Ω f=1MHz, VAC=25mV, D-S short 2
Total Gate Charge Qg 61 nC VDD=800 V, IDS=20 A, VGS=-5/20V 3
Gate-Source Charge Qgs 24 nC VDD=800 V, IDS=20 A, VGS=-5/20V 3
Gate-Drain Charge Qgd 14 nC VDD=800 V, IDS=20 A, VGS=-5/20V 3
Input Capacitance CISS 1377 pF VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV 3
Output Capacitance COSS 62 pF VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV 3
Reverse Transfer Capacitance CRSS 4 pF VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV 3
Diode Forward Voltage VSD 3.8 V VGS=-5 V, IS=10 A 3

CAD (KiCad official)

  • Symbol: CMS120N080B
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin8
  • 3D model: TO-263-7 (KiCad packages3D, STEP)
  • 3D model files: cms120n080b-etched.step / cms120n080b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cms120n080b.step / cms120n080b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Bruckewell datasheet (9 pp, sha256 1368cb13ad780924, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF