# CMPT8099-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

CMPT8099-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base voltage is limited to 5 V (VEBO) and the base-emitter saturation voltage is 1.15 V max at IC=1A, IB=100mA. |
| 2 | E | passive | Emitter of the NPN transistor, the common terminal for the base drive and the collector current. |
| 3 | C | passive | Collector of the NPN transistor, rated 100 V VCEO, 120 V VCBO and 1 A continuous (2 A peak pulse) collector current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | 120 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 100 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 5 | V |  | 1 |
| Collector Current | IC |  |  | 1 | A |  | 1 |
| Peak Pulse Current | IC0 |  |  | 2 | A |  | 1 |
| Collector Power Dissipation | PC |  |  | 250 | mW |  | 1 |
| Operation Junction and Storage Temperature Range | TJ Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance From Junction To Ambient | RθJA |  |  | 500 | °C/W |  | 1 |
| Collector-base breakdown voltage | VBRCBO | 120 |  |  | V | IC=100µA IE=0 | 1 |
| Collector-emitter breakdown voltage | VBRCEO | 100 |  |  | V | IC=10mA IB=0 | 1 |
| Emitter-base breakdown voltage | VBREBO | 5 |  |  | V | IE=100µA IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 100 | nA | VCB=100V IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 100 | nA | VEB=4V IC=0 | 1 |
| DC current gain2 | hFE2 | 300 |  |  |  | VCE=10V IC=500mA | 1 |
| DC current gain3 | hFE3 | 60 |  |  |  | VCE=10V IC=1A | 1 |
| DC current gain4 | hFE4 | 20 |  |  |  | VCE=10V IC=2A | 1 |
| Collector-emitter saturation voltage1 | VCEsat1 |  |  | 0.3 | V | IC=500mA IB=50mA | 1 |
| Collector-emitter saturation voltage2 | VCEsat2 |  |  | 0.6 | V | IC=1A IB=100mA | 1 |
| Base-emitter saturation voltage | VBEsat |  |  | 1.15 | V | IC=1A IB=100mA | 1 |
| Base-emitter voltage | VBE |  |  | 1 | V | VCE=5V IC=1A | 1 |
| Transition frequency | fT | 150 |  |  | MHz | VCE=10V IC=50mA f=1000MHz | 1 |
| Collector output capacitance | Cob |  |  | 10 | pF | VCB=10V f=10MHz | 1 |

## CAD (KiCad official)

- Symbol: `CMPT8099-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `cmpt8099-hxy-etched.step` / `cmpt8099-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmpt8099-hxy.step` / `cmpt8099-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604450134252007424) (4 pp, sha256 `9fcea70b6535f6e7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cmpt8099-hxy-datasheet.pdf)