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CMPT4401 TR PBFREE
Public Made by Adomby adom
Central Semicon Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMPT4401 TR PBFREE
Central Semicon · Bipolar (BJT) · SOT-23
CMPT4401 TR PBFREE from Central Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the CMPT4401 NPN transistor, with emitter-base voltage rated at VEBO 6.0 V maximum and base drive of IB 15 mA in the 150 mA saturation test condition. |
| 2 | Emitter | passive | Emitter terminal of the CMPT4401 NPN transistor, with emitter-base breakdown BVEBO of 6.0 V minimum at IE = 100 µA. |
| 3 | Collector | passive | Collector terminal of the CMPT4401 NPN transistor, rated for collector-emitter voltage VCEO 40 V and continuous collector current IC 600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Central Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BVCEO) | BVCEO | 40 | V | IC=1.0mA | 1 | ||
| Collector-Base Breakdown Voltage (BVCBO) | BVCBO | 60 | V | IC=100μA | 1 | ||
| Emitter-Base Breakdown Voltage (BVEBO) | BVEBO | 6 | V | IE=100μA | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.4 | V | IC=150mA, IB=15mA | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.75 | V | IC=500mA, IB=50mA | 1 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.75 | 0.95 | V | IC=150mA, IB=15mA | 1 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC=500mA, IB=50mA | 1 | ||
| DC Current Gain | hFE | 20 | VCE=1.0V, IC=0.1mA | 1 | |||
| DC Current Gain | hFE | 40 | VCE=1.0V, IC=1.0mA | 1 | |||
| DC Current Gain | hFE | 80 | VCE=1.0V, IC=10mA | 1 | |||
| DC Current Gain | hFE | 100 | 300 | VCE=1.0V, IC=150mA | 1 | ||
| Transition Frequency | fT | 250 | MHz | VCE=10V, IC=20mA, f=100MHz | 1 | ||
| Output Capacitance | Cob | 6.5 | pF | VCB=5.0V, IE=0, f=1.0MHz | 1 | ||
| Input Capacitance | Cib | 30 | pF | VBE=0.5V, IC=0, f=1.0MHz | 1 | ||
| Collector Cutoff Current | ICEV | 0.1 | μA | VCE=35V, VEB=0.4V | 1 | ||
| Base Cutoff Current | IBEV | 0.1 | μA | VCE=35V, VEB=0.4V | 1 | ||
| Small-Signal Input Impedance | hie | 1 | 15 | kΩ | VCE=10V, IC=1.0mA, f=1.0kHz | 2 | |
| Small-Signal Voltage Feedback Ratio | hre | 0.1 | 8 | x10-4 | VCE=10V, IC=1.0mA, f=1.0kHz | 2 | |
| Small-Signal Current Gain | hfe | 40 | 500 | VCE=10V, IC=1.0mA, f=1.0kHz | 2 | ||
| Small-Signal Output Admittance | hoe | 1 | 30 | μS | VCE=10V, IC=1.0mA, f=1.0kHz | 2 | |
| Delay Time | td | 15 | ns | VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA | 2 | ||
| Rise Time | tr | 20 | ns | VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA | 2 | ||
| Storage Time | ts | 225 | ns | VCC=30V, IC=150mA, IB1=IB2=15mA | 2 | ||
| Fall Time | tf | 30 | ns | VCC=30V, IC=150mA, IB1=IB2=15mA | 2 | ||
| Collector-Base Voltage | VCBO | 60 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 40 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Continuous Collector Current | IC | 600 | mA | 1 | |||
| Power Dissipation | PD | 225 | mW | 1 | |||
| Operating and Storage Junction Temperature | TJ, Tstg | -65 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient | ΘJA | 556 | °C/W | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). | 3 |
CAD (KiCad official)
- Symbol:
CMPT4401 TR PBFREE - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
cmpt4401-tr-pbfree-etched.step/cmpt4401-tr-pbfree-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmpt4401-tr-pbfree.step/cmpt4401-tr-pbfree.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Central Semicon datasheet (3 pp, sha256
affd445cef2259eb, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMPT4401 TR PBFREE
**Central Semicon** · Bipolar (BJT) · SOT-23
CMPT4401 TR PBFREE from Central Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the CMPT4401 NPN transistor, with emitter-base voltage rated at VEBO 6.0 V maximum and base drive of IB 15 mA in the 150 mA saturation test condition. |
| 2 | Emitter | passive | Emitter terminal of the CMPT4401 NPN transistor, with emitter-base breakdown BVEBO of 6.0 V minimum at IE = 100 µA. |
| 3 | Collector | passive | Collector terminal of the CMPT4401 NPN transistor, rated for collector-emitter voltage VCEO 40 V and continuous collector current IC 600 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Central Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BVCEO) | BVCEO | 40 | | | V | IC=1.0mA | 1 |
| Collector-Base Breakdown Voltage (BVCBO) | BVCBO | 60 | | | V | IC=100μA | 1 |
| Emitter-Base Breakdown Voltage (BVEBO) | BVEBO | 6 | | | V | IE=100μA | 1 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 0.4 | V | IC=150mA, IB=15mA | 1 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 0.75 | V | IC=500mA, IB=50mA | 1 |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.75 | | 0.95 | V | IC=150mA, IB=15mA | 1 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | | 1.2 | V | IC=500mA, IB=50mA | 1 |
| DC Current Gain | hFE | 20 | | | | VCE=1.0V, IC=0.1mA | 1 |
| DC Current Gain | hFE | 40 | | | | VCE=1.0V, IC=1.0mA | 1 |
| DC Current Gain | hFE | 80 | | | | VCE=1.0V, IC=10mA | 1 |
| DC Current Gain | hFE | 100 | | 300 | | VCE=1.0V, IC=150mA | 1 |
| Transition Frequency | fT | 250 | | | MHz | VCE=10V, IC=20mA, f=100MHz | 1 |
| Output Capacitance | Cob | | | 6.5 | pF | VCB=5.0V, IE=0, f=1.0MHz | 1 |
| Input Capacitance | Cib | | | 30 | pF | VBE=0.5V, IC=0, f=1.0MHz | 1 |
| Collector Cutoff Current | ICEV | | | 0.1 | μA | VCE=35V, VEB=0.4V | 1 |
| Base Cutoff Current | IBEV | | | 0.1 | μA | VCE=35V, VEB=0.4V | 1 |
| Small-Signal Input Impedance | hie | 1 | | 15 | kΩ | VCE=10V, IC=1.0mA, f=1.0kHz | 2 |
| Small-Signal Voltage Feedback Ratio | hre | 0.1 | | 8 | x10-4 | VCE=10V, IC=1.0mA, f=1.0kHz | 2 |
| Small-Signal Current Gain | hfe | 40 | | 500 | | VCE=10V, IC=1.0mA, f=1.0kHz | 2 |
| Small-Signal Output Admittance | hoe | 1 | | 30 | μS | VCE=10V, IC=1.0mA, f=1.0kHz | 2 |
| Delay Time | td | | | 15 | ns | VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA | 2 |
| Rise Time | tr | | | 20 | ns | VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA | 2 |
| Storage Time | ts | | | 225 | ns | VCC=30V, IC=150mA, IB1=IB2=15mA | 2 |
| Fall Time | tf | | | 30 | ns | VCC=30V, IC=150mA, IB1=IB2=15mA | 2 |
| Collector-Base Voltage | VCBO | | | 60 | V | | 1 |
| Collector-Emitter Voltage | VCEO | | | 40 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | 6 | V | | 1 |
| Continuous Collector Current | IC | | | 600 | mA | | 1 |
| Power Dissipation | PD | | | 225 | mW | | 1 |
| Operating and Storage Junction Temperature | TJ, Tstg | -65 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Ambient | ΘJA | | 556 | | °C/W | | 1 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). | 3 |
## CAD (KiCad official)
- Symbol: `CMPT4401 TR PBFREE`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `cmpt4401-tr-pbfree-etched.step` / `cmpt4401-tr-pbfree-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmpt4401-tr-pbfree.step` / `cmpt4401-tr-pbfree.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Central Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600665655788392448) (3 pp, sha256 `affd445cef2259eb`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cmpt4401-tr-pbfree-datasheet.pdf)