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CMPT3906GTR-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMPT3906GTR-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

CMPT3906GTR-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet gives VEBO of -5 V and IC of -200 mA for the device.
2 E passive Emitter of the PNP transistor; maximum emitter-base voltage is -5 V.
3 C passive Collector of the PNP transistor; VCBO and VCEO are -40 V, collector current is -200 mA and collector power dissipation is 200 mW.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -40 V IC=-10μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -40 V IC= -1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10μA, IC=0 2
Collector cut-off current ICBO -100 nA VCB= -40 V, IE=0 2
Collector cut-off current ICEX -50 nA VCE=-30V, VBE(off)=-3V 2
Emitter cut-off current IEBO -100 nA VEB= -5V, IC=0 2
DC current gain hFE1 100 300 VCE=-1V, IC= -10mA 2
DC current gain hFE2 60 VCE= -1V, IC=-50mA 2
DC current gain hFE3 30 VCE= -2V, IC=-100mA 2
Collector-emitter saturation voltage VCE(sat)1 -0.3 V IC=-50mA, IB=-5mA 2
Base-emitter saturation voltage VBE(sat) -0.95 V IC= -50mA, IB=-5mA 2
Transition frequency fT 300 MHz VCE=-20V,IC=-10mA,f=100MHz 2
Delay time td 35 nS VCC=-3V,VBE=-0.5V; IC=-10mA, IB1=IB2=-1mA 2
Rise time tr 35 nS VCC=-3V,VBE=-0.5V; IC=-10mA, IB1=IB2=-1mA 2
Storage time ts 225 nS VCC=-3V,IC=-10mA; IB1=IB2=-1mA 2
Fall time tf 75 nS VCC=-3V,IC=-10mA; IB1=IB2=-1mA 2
Collector-emitter voltage (maximum rating) VCEO -40 V Ta=25°C 1
Collector-base voltage (maximum rating) VCBO -40 V Ta=25°C 1
Emitter-base voltage (maximum rating) VEBO -5 V Ta=25°C 1
Collector current (maximum rating) IC -200 mA Ta=25°C 1
Collector power dissipation PC 200 mW Ta=25°C 1
Thermal resistance from junction to ambient RΘJA 625 ℃/W 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: CMPT3906GTR-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: cmpt3906gtr-hxy-etched.step / cmpt3906gtr-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmpt3906gtr-hxy.step / cmpt3906gtr-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 f376aaec5eea4a38, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF