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Contents

README

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CMP80N04

Cmos(广东场效应半导体) · IC · TO-220

CMP80N04 from Cmos(广东场效应半导体), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET; gate-source voltage is rated at ±20 V (VGS).
2 D passive Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) with continuous drain current of 80 A at TC=25℃.
3 S passive Source terminal of the MOSFET; continuous source current is rated at 80 A maximum (IS) and pulsed source current at 320 A maximum (ISM).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package TO-220
Category
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 80 A 1
Continuous Drain Current ID@TC=100℃ 55 A 1
Pulsed Drain Current IDM 320 A 1
Single Pulse Avalanche Energy EAS 760 mJ Note 1: VDD=40V, VGS=10V, L=1mH, IAS=39A 1
Total Power Dissipation PD@TC=25℃ 260 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 54 ℃/W 1
Thermal Resistance Junction-case RθJC 0.48 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.8 mΩ VGS=10V, ID=25A 2
Static Drain-Source On-Resistance RDS(ON) 8 mΩ VGS=4.5V, ID=25A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=40V, VGS=0V 2
Drain-Source Leakage Current IDSS 100 uA VDS=40V, VGS=0V, Tj=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 80 A 2
Pulsed Source Current ISM 320 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 0.87 1.3 V VGS=0V, IS=45 A, TJ=25℃ 2
BVDSS Temperature Coefficient BVDSS TJ 0.035 V/℃ Reference to 25℃, ID=1mA 2
Forward Transconductance gfs 30 S VDS=10V, ID=15A 2
Gate Resistance Rg 2.1 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 75 nC 2
Gate-Source Charge Qgs 23 nC 2
Gate-Drain Charge Qgd 35 nC 2
Turn-On Delay Time Td(on) 20 ns 2
Rise Time Tr 50 ns 2
Turn-Off Delay Time Td(off) 140 ns 2
Fall Time Tf 65 ns 2
Input Capacitance Ciss 6400 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 470 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 420 pF VDS=25V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMP80N04
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: cmp80n04-etched.step / cmp80n04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmp80n04.step / cmp80n04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (6 pp, sha256 5f8e981e58fecac5, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF