# CMP70N06-VB

**VBsemi Elec** · MOSFETs · TO-220AB

CMP70N06-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage is rated ±20 V per the absolute maximum ratings. |
| 2 | D | passive | Drain pin; continuous drain current is rated 60 A at TC = 25 °C with a junction temperature limit of 175 °C. |
| 3 | S | passive | Source pin; continuous source (diode conduction) current is rated 50 A, with pulsed drain current up to 200 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 60 | A | TJ = 175 °C; TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 50 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 200 | A |  | 1 |
| Continuous Source Current (Diode Conduction) | IS |  |  | 50 | A |  | 1 |
| Avalanche Current | IAS |  |  | 50 | A |  | 1 |
| Single Avalanche Energy | EAS |  |  | 125 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 136 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 3 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Maximum Junction-to-Ambient (t ≤ 10 sec) | RthJA |  | 15 | 18 | °C/W | t 10 sec | 1 |
| Maximum Junction-to-Ambient (Steady State) | RthJA |  | 40 | 50 | °C/W | Steady State | 1 |
| Maximum Junction-to-Case | RthJC |  | 0.85 | 1.1 | °C/W |  | 1 |
| Static Drain-Source Breakdown Voltage | VDS | 60 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 60 V, VGS = 0 | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 60 |  |  | A | VDS = 5 V, VGS = 10 V | 2 |
| Pulsed Current | ISM |  |  | 60 | A |  | 2 |
| Diode Forward Voltage | VSD |  | 1 | 1.5 | V | IF = 20 A, VGS = 0 V | 2 |
| Reverse Recovery Time | trr |  | 45 | 100 | ns | IF = 20 A, di/dt = 100 A/µs | 2 |

## CAD (KiCad official)

- Symbol: `CMP70N06-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `cmp70n06-vb-etched.step` / `cmp70n06-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmp70n06-vb.step` / `cmp70n06-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/cmp70n06-vb-datasheet.pdf) (7 pp, sha256 `323892b99c7175f7`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cmp70n06-vb-datasheet.pdf)