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CMP50N10

Public Made by Adom

by adom

Cmos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMP50N10

Cmos · MOSFETs · TO-220

CMP50N10 from Cmos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±25 V absolute maximum, with threshold of 1 V to 3 V at ID=250uA.
2 D passive Drain; drain-source voltage rated 100 V with 50 A continuous drain current at TC=25℃ (200 A pulsed).
3 S passive Source; main current return terminal, with continuous body-diode source current of 50 A maximum.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=100V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±25V, VDS=0V 2
Static Drain-Source On-Resistance RDS(ON) 14 17 mΩ VGS=10V, ID=25A 2
Static Drain-Source On-Resistance RDS(ON) 18 25 mΩ VGS=4.5V, ID=10A 2
Continuous Source Current IS 50 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 200 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=25A, TJ=25℃ 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID@TC=25℃ 50 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 37 A TC=100℃ 1
Pulsed Drain Current IDM 200 A Repetitive rating; pulse width limited by maximum junction temperature 1
Single Pulse Avalanche Energy EAS 200 mJ VDD=50V, VGS=10V, L=0.5mH, IAS=28A 1
Total Power Dissipation PD@TC=25℃ 100 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-case RθJC 1.25 ℃/W 1
Forward Transconductance gfs 32 S VDS=10V, ID=20A 2
Gate Resistance Rg 2.3 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 50 nC 2
Gate-Source Charge Qgs 10 nC 2
Gate-Drain Charge Qgd 8 nC 2
Turn-On Delay Time Td(on) 10 ns 2
Rise Time Tr 5 ns 2
Turn-Off Delay Time Td(off) 30 ns 2
Fall Time Tf 5 ns 2
Input Capacitance Ciss 3600 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 220 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 190 pF VDS=25V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMP50N10
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: cmp50n10-etched.step / cmp50n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmp50n10.step / cmp50n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (7 pp, sha256 3e695899099dd92e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF