component
CMP18N20
Public Made by Adomby adom
Cmos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMP18N20
Cmos · MOSFETs · TO-220
CMP18N20 from Cmos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V, with gate threshold of 2 V to 4 V at ID=250uA. |
| 2 | D | passive | Drain; 200 V drain-source voltage, 18 A continuous drain current at TC=25℃ and 72 A pulsed. |
| 3 | S | passive | Source; continuous source current 18 A and 72 A pulsed through the body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 170 | mΩ | VGS=10V , ID=9A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS , ID =250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=200V , VGS =0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=160V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30V , VDS=0V | 2 | |
| Continuous Source Current | IS | 18 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 72 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.4 | V | VGS=0V , IS=18 A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 18 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 9.1 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 72 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 324 | mJ | VDD=50V , VGS=10V , L=2mH , IAS=18A | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 100 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Thermal Resistance Junction-case | RθJC | 1.2 | ℃/W | 1 | |||
| Forward Transconductance | gfs | 11 | S | VDS=10V , ID =10A | 2 | ||
| Total Gate Charge | Qg | 22 | nC | 2 | |||
| Gate-Source Charge | Qgs | 6.6 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 7.2 | nC | 2 | |||
| Turn-On Delay Time | Td(on) | 15 | ns | 2 | |||
| Rise Time | Tr | 130 | ns | 2 | |||
| Turn-Off Delay Time | Td(off) | 140 | ns | 2 | |||
| Fall Time | Tf | 100 | ns | 2 | |||
| Input Capacitance | Ciss | 1000 | pF | VDS=25V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 220 | pF | VDS=25V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | VDS=25V , VGS=0V , f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
CMP18N20 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
cmp18n20-etched.step/cmp18n20-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmp18n20.step/cmp18n20.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
8d629072c4b0f0b5, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).