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CMP035N06

Public Made by Adom

by adom

Cmos(广东场效应半导体) , TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 4d ago
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cmp035n06-etched.step cmp035n06: factory component page (tier=lcsc) · Ray 4d ago
cmp035n06-hero.glb cmp035n06: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
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cmp035n06.step Publish 0.1.0 · Ray 4d ago
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CMP035N06

Cmos(广东场效应半导体) · IC · TO-220

CMP035N06 from Cmos(广东场效应半导体), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the MOSFET with a maximum gate-source voltage of ±20 V and a threshold of 1 to 3 V at 250 uA.
2 D passive Drain, rated 60 V drain-source and 135 A continuous at TC=25°C (405 A pulsed); also connected to the tab.
3 S passive Source; the body diode conducts up to 135 A continuous (405 A pulsed) from source to drain.

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package TO-220
Category
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 135 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 95 A TC=100℃ 1
Pulsed Drain Current IDM 405 A 1
Single Pulse Avalanche Energy EAS 756 mJ VDD=30V,VGS=10V,L=0.5mH,IAS=55A 1
Total Power Dissipation PD 180 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-case RθJC 3.4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 3.6 6 mΩ VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=30V, VGS=0V 2
Drain-Source Leakage Current IDSS 5 uA VDS=30V, VGS=0V, Tj=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 135 A 2
Pulsed Source Current ISM 405 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 0.8 1 V VGS=0V, I F=20A, TJ=25℃ 2
Static Drain-Source On-Resistance RDS(ON) 3.5 mΩ VGS=10V, ID=20A 2
Forward Transconductance gfs 35 S VDS=10V, ID=20A 2
Gate Resistance Rg 1.2 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 41 nC 2
Gate-Source Charge Qgs 14 nC 2
Gate-Drain Charge Qgd 12 nC 2
Turn-On Delay Time Td(on) 25 ns 2
Rise Time Tr 43 ns 2
Turn-Off Delay Time Td(off) 61 ns 2
Fall Time Tf 23 ns 2
Input Capacitance Ciss 4200 pF VDS=30V, VGS=0V, f=1MHz 2
Output Capacitance Coss 780 pF VDS=30V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 12 pF VDS=30V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMP035N06
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: cmp035n06-etched.step / cmp035n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmp035n06.step / cmp035n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256 3e32a4b398dd885d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF