component
CMN3400ZM
Public Made by Adomby adom
Cmos(广东场效应半导体) , SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMN3400ZM
Cmos(广东场效应半导体) · IC · SOT-23-3L
CMN3400ZM from Cmos(广东场效应半导体), in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for gate-source voltage VGS of ±20V, and the datasheet notes operation with gate voltages as low as 1.5V. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, the common reference for VGS; the device is rated for drain-source voltage VDS of 30V. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for 30V drain-source voltage and 6A continuous drain current at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOT-23-3L |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 25 | mΩ | VGS=10V, ID=6A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 38 | mΩ | VGS=4.5V, ID=5A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID@TA=25℃ | 6 | A | TA=25℃ | 2 | ||
| Pulsed Drain Current | IDM | 30 | A | 2 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | TA=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/ W | Junction-ambient | 2 | ||
| Thermal Resistance Junction-case | RθJC | 125 | °C/W | Junction-to-case, as printed in transient thermal impedance graph note | 5 |
CAD (KiCad official)
- Symbol:
CMN3400ZM - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
cmn3400zm-etched.step/cmn3400zm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmn3400zm.step/cmn3400zm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (5 pp, sha256
60bcf8e9ad1988ec, retrieved 2026-11-08, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).