component
CMN2328TM
Public Made by Adomby adom
Cmos(广东场效应半导体) , SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4d ago |
| viewers | 4d ago |
| cmn2328tm-etched.glb | 4d ago |
| cmn2328tm-etched.step | 4d ago |
| cmn2328tm-hero.glb | 4d ago |
| cmn2328tm-hero.overlay.json | 4d ago |
| cmn2328tm.glb | 4d ago |
| cmn2328tm.kicad_mod | 4d ago |
| cmn2328tm.kicad_sym | 4d ago |
| cmn2328tm.lbr | 4d ago |
| cmn2328tm.step | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| README.md | 4d ago |
CMN2328TM
Cmos(广东场效应半导体) · IC · SOT-23-3L
CMN2328TM from Cmos(广东场效应半导体), in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and a gate threshold voltage of 1 V to 2.5 V at VGS=VDS, ID=250uA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, with the diode forward voltage specified at VGS=0V, IS=1A as 1.2 V maximum. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 100 V and a continuous drain current of 4.5 A at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOT-23-3L |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 103 | mΩ | VGS=10V, ID=2.8A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 108 | mΩ | VGS=4.5V, ID=1A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID@TC=25℃ | 4.5 | A | 2 | |||
| Pulsed Drain Current | IDM | 15 | A | 2 | |||
| Total Power Dissipation | PD@TC=25℃ | 3 | W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-ambient | RθJA | 100 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
CMN2328TM - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
cmn2328tm-etched.step/cmn2328tm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmn2328tm.step/cmn2328tm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (2 pp, sha256
2e99bf5b15a6b83f, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).