component
CMN2309M
Public Made by Adomby adom
Cmos MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCMN2309M
Cmos · MOSFETs · SOT-23-3L
CMN2309M from Cmos, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal of the P-channel enhancement MOSFET; gate-source voltage is rated ±20 V (absolute maximum) and the gate threshold VGS(th) is -1 V to -3 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -60 V and a continuous drain current of -2 A. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; rated -60 V drain-source voltage, -2 A continuous drain current and -6 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | SOT-23-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V , ID=-250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VGS=VDS , ID=-250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 165 | mΩ | VGS=-10V , ID=-1.6A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 220 | mΩ | VGS=-4.5V , ID=-1.4A | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | uA | VDS=-48V ,VGS=0V | 2 | ||
| Gate-Body Leakage current | GSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Diode Forward Voltage | VSD | -1 | V | VGS=0V , IS=-1A | 2 | ||
| Drain-Source Voltage | VDS | -60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -2 | A | 2 | |||
| Pulsed Drain Current | IDM | -6 | A | 2 | |||
| Total Power Dissipation | PD | 1 | W | PD@TA=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | 150 | ℃ | 2 | |||
| Thermal Resistance Junction-ambient | RθJA | 150 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
CMN2309M - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
cmn2309m-etched.step/cmn2309m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmn2309m.step/cmn2309m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
db9067b8cf52c084, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).