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Contents

README

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CMKT5078TR-HXY

HXY MOSFET · Bipolar (BJT) · SOT-363

CMKT5078TR-HXY from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (NPN element, 60 V VCBO, 50 V VCEO, 150 mA IC); pin 1 is marked on the package.
2 B1 passive Base of transistor 1 (NPN element); VEBO rating is 7 V.
3 C2 passive Collector of transistor 2 (PNP element); VCBO -60 V, IC -150 mA.
4 E2 passive Emitter of transistor 2 (PNP element); VEBO rating is -7 V.
5 B2 passive Base of transistor 2 (PNP element).
6 C1 passive Collector of transistor 1 (NPN element); VCBO 60 V, VCEO 50 V, IC 150 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN Collector-base breakdown voltage V(BR)CBO 60 V IC=50μA,IE=0 1
NPN Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA,IB=0 1
NPN Emitter-base breakdown voltage V(BR)EBO 7 V IE=50μA,IC=0 1
NPN Collector cut-off current ICBO 0.1 μA VCB=60V,IE=0 1
NPN Emitter cut-off current IEBO 0.1 μA VEB=7V,IC=0 1
NPN DC current gain hFE 120 560 VCE=6V,IC=1mA 1
NPN Collector-emitter saturation voltage VCE(sat) 0.4 V IC=50mA,IB=5mA 1
NPN Collector output capacitance Cob 2 3.5 pF VCB=12V,IE=0,f=1MHz 1
PNP Collector-base breakdown voltage V(BR)CBO -60 V IC=-50μA,IE=0 2
PNP Collector-emitter breakdown voltage V(BR)CEO -50 V IC=-1mA,IB=0 2
PNP Emitter-base breakdown voltage V(BR)EBO -6 V IE=-50μA,IC=0 2
PNP Collector cut-off current ICBO -0.1 μA VCB=-60V,IE=0 2
PNP Emitter cut-off current IEBO -0.1 μA VEB=-6V,IC=0 2
PNP DC current gain hFE 120 560 VCE=-6V,IC=-1mA 2
PNP Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-50mA,IB=-5mA 2
NPN Collector-Base Voltage VCBO 60 V Ta=25°C 1
NPN Collector-Emitter Voltage VCEO 50 V Ta=25°C 1
NPN Emitter-Base Voltage VEBO 7 V Ta=25°C 1
NPN Collector Current IC 150 mA Ta=25°C 1
NPN Collector Power Dissipation PC 150 mW Ta=25°C 1
NPN Thermal Resistance From Junction To Ambient RΘJA 625 ℃/W 1
NPN Operation Junction And Storage Temperature Range TJ,Tstg -55 150 ℃ 1
PNP Collector-Base Voltage VCBO -60 V Ta=25°C 2
PNP Collector-Emitter Voltage VCEO -60 V Ta=25°C 2
PNP Emitter-Base Voltage VEBO -7 V Ta=25°C 2
PNP Collector Current IC -150 mA Ta=25°C 2
PNP Collector Power Dissipation PC 150 mW Ta=25°C 2
PNP Thermal Resistance From Junction To Ambient RΘJA 625 ℃/W 2
PNP Operation Junction And Storage Temperature Range TJ,Tstg -55 150 ℃ 2
NPN Transition frequency fT 180 MHz VCE=12V,IC=2mA,f=100MHz 1
PNP Transition frequency fT 140 MHz VCE=-12V,IC=-2mA,f=100MHz 2
PNP Collector output capacitance Cob 5 pF VCB=-12V,IE=0,f=1MHz 2

CAD (KiCad official)

  • Symbol: CMKT5078TR-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: cmkt5078tr-hxy-etched.step / cmkt5078tr-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmkt5078tr-hxy.step / cmkt5078tr-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 5c43352b0f5ded6a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF