main
History Download
Ray Publish 0.1.0 bed9a4a 1d ago

CMF12N65

Cmos · MOSFETs · TO-220F

CMF12N65 from Cmos, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V with threshold of 2 to 4 V at VDS = VGS, ID = 250 µA.
2 D passive Drain; drain-source voltage up to 650 V with 12 A continuous current (limited by junction temperature) and 48 A pulsed.
3 S passive Source; connects to the body diode anode and the return for drain current, rated 12 A continuous diode forward current.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGSS -30 30 V 1
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (high temperature) 10 µA VDS = 520 V, TC=125℃ 2
Drain-Source Diode Forward Current, Continuous IS 12 A 2
Drain-Source Diode Forward Current, Pulsed ISM 48 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 10A 2
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 250 µA 2
Static Drain-Source On-Resistance RDS(on) 0.69 0.75 Ω VGS = 10 V, ID = 6A 2
Drain Current - Continuous (TC = 100℃) ID 7.4 A TC = 100℃ 1
Drain Current - Pulsed IDM 48 A Note 1 1
Single Pulsed Avalanche Energy EAS 865 mJ Note 2 1
Repetitive Avalanche Energy EAR 23 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 1
Drain-Source Voltage VDSS 650 V 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum lead temperature for soldering purposes TL 300 ℃ 1/8 from case for 5 seconds 1
Thermal Resistance, Junction-to-Case (TO-220F) RθJC 2.33 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W 1
Breakdown Voltage Temperature Coefficient BVDSS/TJ 0.7 V/℃ ID = 250 µA, Referenced to 25℃ 2
Input Capacitance Ciss 2500 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 180 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 20 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Total Gate Charge Qg 50 nC VDS = 520 V, ID = 12A, VGS = 10 V 2
Gate-Source Charge Qgs 8 nC VDS = 520 V, ID = 12A, VGS = 10 V 2
Gate-Drain Charge Qgd 20 nC VDS = 520 V, ID = 12A, VGS = 10 V 2
Reverse Recovery Time trr 430 ns VGS = 0 V, IS = 12A, dIF / dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: CMF12N65
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (2 pp, sha256 1a68fc9a8a87fbb3, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF