# CME5P10

**Cmos(广东场效应半导体)** · IC · SOT-89

CME5P10 from Cmos(广东场效应半导体), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating is ±20 V, with threshold VGS(th) of -1 to -3 V at ID=-250uA. |
| 2 | D | passive | Drain; drain-source voltage -100 V, continuous drain current -5 A at TA=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -5 A and pulsed source current is -20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOT-89 |
| Category |  |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -5 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID |  |  | -3.5 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM |  |  | -20 | A |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ |  |  | 150 | ℃ |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 62.5 | mJ | Note 1: VDS=-50V, VGS=-10V, L=5mH, IAS=-5A | 1 |
| Total Power Dissipation | PD |  |  | 2.5 | W | TA=25℃ | 1 |
| Thermal Resistance Junction-ambient | R JA |  |  | 50 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -100 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 160 | 190 | mΩ | VGS=-10V, ID=-1A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 220 | mΩ | VGS=-4.5V, ID=-1A | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -25 | uA | VDS=-80V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -3 | V | VGS=VDS, ID=-250uA | 2 |
| Continuous Source Current | IS |  |  | -5 | A |  | 2 |
| Pulsed Source Current | ISM |  |  | -20 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  | -0.87 | -1.2 | V | VGS=0V, IS=-5A | 2 |

## CAD (KiCad official)

- Symbol: `CME5P10`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `cme5p10-etched.step` / `cme5p10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cme5p10.step` / `cme5p10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602845929737506816) (3 pp, sha256 `b36d50de1ef56b13`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cme5p10-datasheet.pdf)