component
CMD80N06
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| cmd80n06-etched.glb | 13d ago |
| cmd80n06-etched.step | 13d ago |
| cmd80n06-hero.glb | 13d ago |
| cmd80n06-hero.overlay.json | 13d ago |
| cmd80n06.glb | 13d ago |
| cmd80n06.kicad_mod | 13d ago |
| cmd80n06.kicad_sym | 13d ago |
| cmd80n06.lbr | 13d ago |
| cmd80n06.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
CMD80N06
Cmos(广东场效应半导体) · MOSFETs · TO-252
CMD80N06 from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (absolute maximum). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated at 60 V with continuous drain current of 80 A at TC=25℃ (50 A at TC=100℃). |
| 3 | S | passive | Source terminal; reference terminal for the gate-source voltage and drain-source ratings of the device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS , ID =250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V , VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9 | 12 | mΩ | VGS=6V , ID=20A | 2 | |
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, ISD =28A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 250 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 480 | mJ | VDD=30V , VGS=10V , L=1mH , IAS=31A | 1 | ||
| Total Power Dissipation | PD | 150 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 3 | ℃/W | Surface mounted on 1 in2 copper pad of FR4 board | 1 |
CAD (KiCad official)
- Symbol:
CMD80N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd80n06-etched.step/cmd80n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd80n06.step/cmd80n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256
eab1cce3f72633eb, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).