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CMD65R580

Public Made by Adom

by adom

Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMD65R580

Cmos · MOSFETs · TO-252

CMD65R580 from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±30 V max and threshold of 2 to 4 V at 250 µA.
2 D passive Drain (also the metal tab); drain-source voltage rated 650 V max, continuous 8 A at TC = 25°C and 24 A pulsed.
3 S passive Source; connects to the body diode anode, with continuous diode forward current of 8 A max.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 600V, VGS = 0 V 2
Gate-Body Leakage Current, Forward IGSSF -100 100 nA VGS = ±30V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 0.55 0.62 Ω VGS = 10 V, ID = 2.5A 2
Maximum Continuous Drain-Source Diode Forward Current IS 8 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 24 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 5A 2
Drain-Source Voltage VDSS 650 V TC = 25°C 1
Drain Current - Continuous (TC = 25°C) ID 8 A TC = 25°C 1
Drain Current - Continuous (TC = 100°C) ID 5 A TC = 100°C 1
Drain Current - Pulsed IDM 24 A TC = 25°C 1
Gate-Source Voltage VGSS -30 30 V TC = 25°C 1
Single Pulse Avalanche Energy EAS 170 mJ VDD=80V, VGS=10V, L=20mH, IAS=3.4A 1
Power Dissipation PD 45 W TC = 25°C 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Case RθJC 2.75 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W 1
Gate resistance RG 27 Ω f=1MHz, open drain 2
Input Capacitance Ciss 480 pF VDS = 100V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 35 pF VDS = 100V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 8.2 pF VDS = 100V, VGS = 0 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 15 ns VDS = 300 V, VGS=10V, ID = 8A, RG = 25Ω 2
Turn-On Rise Time tr 35 ns VDS = 300 V, VGS=10V, ID = 8A, RG = 25Ω 2
Turn-Off Delay Time td(off) 76 ns VDS = 300 V, VGS=10V, ID = 8A, RG = 25Ω 2
Turn-Off Fall Time tf 33 ns VDS = 300 V, VGS=10V, ID = 8A, RG = 25Ω 2
Total Gate Charge Qg 13 nC VDS = 480V, ID = 8A, VGS = 10V 2
Gate-Source Charge Qgs 4 nC VDS = 480V, ID = 8A, VGS = 10V 2
Gate-Drain Charge Qgd 5 nC VDS = 480V, ID = 8A, VGS = 10V 2
Reverse Recovery Time trr 260 ns IF = 8A, dI/dt = 100 A/us 2
Reverse Recovery Charge Qrr 2 μC IF = 8A, dI/dt = 100 A/us 2

CAD (KiCad official)

  • Symbol: CMD65R580
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd65r580-etched.step / cmd65r580-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd65r580.step / cmd65r580.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (6 pp, sha256 d5082adb587aabf0, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF