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CMD65R380Q

Public Made by Adom

by adom

Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMD65R380Q

Cmos · MOSFETs · TO-252

CMD65R380Q from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±30 V and a threshold of 2 to 4 V at ID=250µA.
2 D passive Drain, also the exposed tab; VDS is rated 650 V and continuous current is 11 A at TC=25°C.
3 S passive Source; the body diode conducts continuous source current up to 11 A.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 0.38 Ω VGS=10V , ID=5.5A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS= VGS, ID = 250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=650V , VGS=0V , TJ=25℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS 30V , VDS=0V 2
Continuous Source Current IS 11 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 44 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.4 V VGS=0V , IS=11A ,TJ=25℃ 2
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS 30 V 1
Continuous Drain Current ID@TC=25 11 A TC=25 1
Continuous Drain Current ID@TC=100 9 A TC=100 1
Pulsed Drain Current IDM 44 A 1
Single Pulse Avalanche Energy EAS 1 mJ VDS=80V , VGS=10V , L=20mH , IAS=4.5A 2
Total Power Dissipation PD@TC=25 83 W TC=25 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance Junction-ambient RθJA 62 °C/W 1
Thermal Resistance Junction-Case RθJC 1.5 °C/W 1
Forward Transconductance gfs 8 S VDS=30V, ID=4A 2
Gate Resistance Rg 23 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge Qg 21 nC VDS=520V,VGS=10V , ID=10.6A 2
Gate-Source Charge Qgs 5.3 nC VDS=520V,VGS=10V , ID=10.6A 2
Gate-Drain Charge Qgd 7.5 nC VDS=520V,VGS=10V , ID=10.6A 2
Turn-On Delay Time Td(on) 20 ns VDS=325V, VGS=10V, RG=25Ω, ID=10.6A 2
Rise Time Tr 39 ns VDS=325V, VGS=10V, RG=25Ω, ID=10.6A 2
Turn-Off Delay Time Td(off) 109 ns VDS=325V, VGS=10V, RG=25Ω, ID=10.6A 2
Fall Time Tf 37 ns VDS=325V, VGS=10V, RG=25Ω, ID=10.6A 2
Input Capacitance Ciss 750 pF VDS=100V , VGS=0V , f=1MHz 2
Output Capacitance Coss 42 pF VDS=100V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 3.1 pF VDS=100V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 324 ns di/dt = 100A/μs, VDD=100V, IF=10.6A 2
Reverse Recovery Charge Qrr 3.8 μC di/dt = 100A/μs, VDD=100V, IF=10.6A 2

CAD (KiCad official)

  • Symbol: CMD65R380Q
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd65r380q-etched.step / cmd65r380q-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd65r380q.step / cmd65r380q.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (7 pp, sha256 d9702f7b438bc341, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF