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CMD6411
Public Made by Adomby adom
Cmos(广东场效应半导体) , TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMD6411
Cmos(广东场效应半导体) · IC · TO-252
CMD6411 from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±12 V, with threshold VGS(th) of -0.5 V to -1.5 V at ID=-250 uA. |
| 2 | D | passive | Drain (also the tab); drain-source voltage is rated -20 V with continuous drain current of -100 A at TC=25 °C. |
| 3 | S | passive | Source; continuous source (body-diode) current is -100 A max and pulsed source current is -400 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Thermal Resistance Junction-ambient | RθJA | 55 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.8 | ℃/W | 1 | |||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current (TC=25℃) | ID | -100 | A | ID@TC=25℃ | 1 | ||
| Continuous Drain Current (TC=100℃) | ID | -70 | A | ID@TC=100℃ | 1 | ||
| Drain-Source Avalanche Energy | EAS | 250 | mJ | 1 | |||
| Total Power Dissipation | PD | 70 | W | PD@TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Pulsed Drain Current | IDM | -400 | A | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3.2 | 3.7 | mΩ | VGS=-4.5V, ID=-25A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.9 | 3.3 | mΩ | VGS=-10V , ID=-28A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.1 | 4.7 | mΩ | VGS=-2.5V, ID=-20A | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -1.5 | V | VGS=VDS, ID =-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-16V, VGS=0V , TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±12V , VDS=0V | 2 | |
| Continuous Source Current | IS | -100 | A | 2 | |||
| Pulsed Source Current | ISM | -400 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IF=-28A | 2 |
CAD (KiCad official)
- Symbol:
CMD6411 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd6411-etched.step/cmd6411-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd6411.step/cmd6411.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
5f819aefb39593e4, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).