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CMD609

Cmos · MOSFETs · TO-252-4L

CMD609 from Cmos, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (40V, 12A, RDS(ON)≤21mΩ at VGS=10V).
2 G1 input Gate of the N-channel MOSFET, VGS rated ±20V, threshold 1V to 2.5V.
3 S2 passive Source of the P-channel MOSFET (-40V, -12A, RDS(ON)≤32mΩ at VGS=-10V).
4 G2 input Gate of the P-channel MOSFET, VGS rated ±20V, threshold -1V to -2V.
5 D1/D2 passive Common drain of the N-channel and P-channel MOSFETs, connected to the exposed tab.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-252-4L
Category Triode/MOS Tube/Transistor
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V , ID=250μA 2
N-ch Static Drain-Source On-Resistance RDS(ON) 21 mΩ VGS=10V , ID=12A 2
N-ch Static Drain-Source On-Resistance RDS(ON) 25 mΩ VGS=4.5V , ID=8A 2
N-ch Gate Threshold Voltage VGS(th) 1 2.5 V VGS=VDS , ID =250μA 2
N-ch Drain-Source Leakage Current IDSS 1 uA VDS=40V , VGS=0V 2
N-ch Gate-Source Leakage Current IGSS -100 100 nA VGS= ±20V , VDS=0V 2
N-ch Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A 2
N-ch Continuous Source Current IS 12 A VG=VD=0V , Force Current 2
N-ch Pulsed Source Current ISM 36 A VG=VD=0V , Force Current 2
P-ch Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V , ID=-250μA 3
P-ch Static Drain-Source On-Resistance RDS(ON) 32 mΩ VGS=-10V , ID=-12A 3
P-ch Static Drain-Source On-Resistance RDS(ON) 40 mΩ VGS=-4.5V , ID=-8A 3
P-ch Gate Threshold Voltage VGS(th) -1 -2 V VGS=VDS , ID =-250μA 3
P-ch Drain-Source Leakage Current IDSS -1 uA VDS=-40V , VGS=0V 3
P-ch Gate-Source Leakage Current IGSS -100 100 nA VGS = ±20V , VDS=0V 3
P-ch Diode Forward Voltage VSD 1.5 V VGS=0V , IS=-12A 3
P-ch Continuous Source Current IS -12 A VG=VD=0V , Force Current 3
P-ch Pulsed Source Current ISM -36 A VG=VD=0V , Force Current 3
N-ch Drain-Source Voltage VDS 40 V n-channel 1
N-ch Gate-Source Voltage VGS -20 20 V n-channel 1
N-ch Continuous Drain Current ID 12 A TC=25℃ 1
N-ch Pulsed Drain Current IDM 36 A n-channel 1
P-ch Drain-Source Voltage VDS -40 V p-channel 1
P-ch Gate-Source Voltage VGS -20 20 V p-channel 1
P-ch Continuous Drain Current ID -12 A TC=25℃ 1
P-ch Pulsed Drain Current IDM -36 A p-channel 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Repetitive Avalanche Energy EAR 20 mJ 1
Power Dissipation PD 30 W TC = 25°C 1
N-ch Junction-to-Ambient Thermal Resistance RθJA 60 ℃/W 1
N-ch Junction-to-Case Thermal Resistance RθJc 5.5 ℃/W 1
P-ch Junction-to-Ambient Thermal Resistance RθJA 60 ℃/W 2
P-ch Junction-to-Case Thermal Resistance RθJC 5 ℃/W 2

CAD (KiCad official)

  • Symbol: CMD609
  • Footprint: Package_TO_SOT_SMD:TO-252-4
  • 3D model: TO-252-4L (KiCad packages3D, STEP)
  • 3D model files: cmd609-etched.step / cmd609-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd609.step / cmd609.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (3 pp, sha256 b5e756b8d880a885, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF