component
CMD609
Public Made by Adomby adom
Cmos MOSFETs, TO-252-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| cmd609-etched.glb | 16d ago |
| cmd609-etched.step | 16d ago |
| cmd609-hero.glb | 16d ago |
| cmd609-hero.overlay.json | 16d ago |
| cmd609.glb | 16d ago |
| cmd609.kicad_mod | 16d ago |
| cmd609.kicad_sym | 16d ago |
| cmd609.lbr | 16d ago |
| cmd609.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
CMD609
Cmos · MOSFETs · TO-252-4L
CMD609 from Cmos, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (40V, 12A, RDS(ON)≤21mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, VGS rated ±20V, threshold 1V to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-40V, -12A, RDS(ON)≤32mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, VGS rated ±20V, threshold -1V to -2V. |
| 5 | D1/D2 | passive | Common drain of the N-channel and P-channel MOSFETs, connected to the exposed tab. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-252-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V , ID=250μA | 2 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 21 | mΩ | VGS=10V , ID=12A | 2 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 25 | mΩ | VGS=4.5V , ID=8A | 2 | ||
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS , ID =250μA | 2 | |
| N-ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=40V , VGS=0V | 2 | ||
| N-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V , VDS=0V | 2 | |
| N-ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A | 2 | ||
| N-ch Continuous Source Current | IS | 12 | A | VG=VD=0V , Force Current | 2 | ||
| N-ch Pulsed Source Current | ISM | 36 | A | VG=VD=0V , Force Current | 2 | ||
| P-ch Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V , ID=-250μA | 3 | ||
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 32 | mΩ | VGS=-10V , ID=-12A | 3 | ||
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 40 | mΩ | VGS=-4.5V , ID=-8A | 3 | ||
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -2 | V | VGS=VDS , ID =-250μA | 3 | |
| P-ch Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-40V , VGS=0V | 3 | ||
| P-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V , VDS=0V | 3 | |
| P-ch Diode Forward Voltage | VSD | 1.5 | V | VGS=0V , IS=-12A | 3 | ||
| P-ch Continuous Source Current | IS | -12 | A | VG=VD=0V , Force Current | 3 | ||
| P-ch Pulsed Source Current | ISM | -36 | A | VG=VD=0V , Force Current | 3 | ||
| N-ch Drain-Source Voltage | VDS | 40 | V | n-channel | 1 | ||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | n-channel | 1 | |
| N-ch Continuous Drain Current | ID | 12 | A | TC=25℃ | 1 | ||
| N-ch Pulsed Drain Current | IDM | 36 | A | n-channel | 1 | ||
| P-ch Drain-Source Voltage | VDS | -40 | V | p-channel | 1 | ||
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | p-channel | 1 | |
| P-ch Continuous Drain Current | ID | -12 | A | TC=25℃ | 1 | ||
| P-ch Pulsed Drain Current | IDM | -36 | A | p-channel | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Repetitive Avalanche Energy | EAR | 20 | mJ | 1 | |||
| Power Dissipation | PD | 30 | W | TC = 25°C | 1 | ||
| N-ch Junction-to-Ambient Thermal Resistance | RθJA | 60 | ℃/W | 1 | |||
| N-ch Junction-to-Case Thermal Resistance | RθJc | 5.5 | ℃/W | 1 | |||
| P-ch Junction-to-Ambient Thermal Resistance | RθJA | 60 | ℃/W | 2 | |||
| P-ch Junction-to-Case Thermal Resistance | RθJC | 5 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
CMD609 - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files:
cmd609-etched.step/cmd609-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd609.step/cmd609.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (3 pp, sha256
b5e756b8d880a885, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).