component
CMD6015
Public Made by Adomby adom
Cmos(广东场效应半导体) , TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 5d ago |
| viewers | 5d ago |
| cmd6015-etched.glb | 5d ago |
| cmd6015-etched.step | 5d ago |
| cmd6015-hero.glb | 5d ago |
| cmd6015-hero.overlay.json | 5d ago |
| cmd6015.glb | 5d ago |
| cmd6015.kicad_mod | 5d ago |
| cmd6015.kicad_sym | 5d ago |
| cmd6015.lbr | 5d ago |
| cmd6015.step | 5d ago |
| package.json | 5d ago |
| page.json | 5d ago |
| README.md | 5d ago |
CMD6015
Cmos(广东场效应半导体) · IC · TO-252
CMD6015 from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive pin with VGS rated ±20 V maximum and gate threshold 1.0 to 2.8 V. |
| 2 | D | passive | Drain (center pin and metal tab); drain-source voltage rated 150 V and continuous drain current 19 A at TC=25℃. |
| 3 | S | passive | Source; current return for the 150 V N-channel MOSFET, with continuous source current of 19 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 74 | 90 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 78 | 100 | mΩ | VGS=4.5V, ID=8A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.8 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS= 150V, VGS=0V, TJ=25 | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=150V, VGS=0V, TJ=55 | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 19 | A | 2 | |||
| Pulsed Source Current | ISM | 76 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.81 | 1 | V | VGS=0V, IS=10A, TJ=25℃ | 2 | |
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 19 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 13.5 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 76 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 60 | mJ | 1 | |||
| Avalanche Current | IAS | 9 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 83 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | 1 | |||
| Thermal Resistance Junction-ambient (Steady-State) | RθJA | 50 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.8 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CMD6015 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd6015-etched.step/cmd6015-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd6015.step/cmd6015.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (2 pp, sha256
abce215043d5040c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).