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CMD4N65

Public Made by Adom

by adom

Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMD4N65

Cmos · MOSFETs · TO-252

CMD4N65 from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated at ±30 V (VGSS).
2 D passive Drain terminal; rated for 650 V drain-source voltage (VDSS) with 4.0 A continuous drain current at TC = 25°C.
3 S passive Source terminal; reference for the gate-source voltage rating of ±30 V (VGSS).

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Drain Current - Continuous ID 2.6 A TC = 100°C 1
Drain Current - Pulsed IDM 12 A 1
Gate-Source Voltage VGSS -30 30 V 1
Avalanche Current IAR 4 A 1
Power Dissipation PD 60 W TC = 25°C 1
Operating and Storage Temperature Range TJ, TSTG -25 150 °C 1
Maximum lead temperature for soldering purposes TL 300 °C 1/8 from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 2 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 650 V, VGS = 0 V 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 2.5 4.5 V VDS = VGS, ID = 250 µA 2
Static Drain-Source On-Resistance RDS(on) 2.6 Ω VGS = 10 V, ID = 2A 2
Input Capacitance Ciss 800 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 15 ns VDD = 300 V, VGS = 10V, ID = 1A, RG = 10Ω 2
Turn-On Rise Time tr 20 ns 2
Turn-Off Delay Time td(off) 30 ns 2
Turn-Off Fall Time tf 30 ns 2
Total Gate Charge Qg 18 nC VDS = 520V, ID = 1A, VGS = 10 V 2
Maximum Continuous Drain-Source Diode Forward Current IS 4 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 12 A 2
Drain-Source Diode Forward Voltage VSD 1 V VGS = 0 V, IS = 1A 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.69 V/°C ID = 1mA, Referenced to 25°C 2
Forward Transconductance gFS 3 S VDS = 15 V, ID = 2A 2
Output Capacitance Coss 60 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 4 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Gate-Source Charge Qgs 5 nC 2
Gate-Drain Charge Qgd 6 nC 2
Reverse Recovery Time trr 200 ns IF = 1A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 580 nC 2

CAD (KiCad official)

  • Symbol: CMD4N65
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd4n65-etched.step / cmd4n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd4n65.step / cmd4n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (2 pp, sha256 289c42c0b2fa95b4, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF