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CMD30P02
Public Made by Adomby adom
Cmos(广东场效应半导体) , TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMD30P02
Cmos(广东场效应半导体) · IC · TO-252
CMD30P02 from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±12 V maximum and threshold of -0.5 to -1.5 V at ID=-250uA. |
| 2 | D | passive | Drain, also the exposed tab; rated VDS -20 V and continuous drain current -30 A at TC=25℃. |
| 3 | S | passive | Source; carries up to -30 A continuous with body diode forward voltage of -1.3 V max at IF=-5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -30 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -18 | A | TC=75℃ | 1 | ||
| Pulsed Drain Current | IDM | -120 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 42 | mJ | VDD=-15V, VGS=-10V, L=0.5mH, IAS=-13A | 1 | ||
| Total Power Dissipation | PD | 40 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 110 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 4 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 30 | 40 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 50 | 90 | mΩ | VGS=-2.5V, ID=-4A | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -1.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -10 | uA | VDS=-20V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±12V, VDS=0V | 2 | |
| Continuous Source Current | IS | -30 | A | 2 | |||
| Pulsed Source Current | ISM | -120 | A | VGS =VDS =0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.3 | V | VGS=0V, IF=-5A, Tj =25℃ | 2 |
CAD (KiCad official)
- Symbol:
CMD30P02 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd30p02-etched.step/cmd30p02-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd30p02.step/cmd30p02.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256
f2d5ed1cb8bdeb7a, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).