component
CMD1653
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
CMD1653
Cmos(广东场效应半导体) · MOSFETs · TO-252
CMD1653 from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated at 30 V (VDS) with continuous drain current of 50 A at TC=25°C. |
| 3 | S | passive | Source terminal; continuous source current is rated at 50 A (IS) and pulsed source current at 150 A (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Continuous Drain Current | ID@TC=25 | 50 | A | 1 | |||
| Continuous Drain Current | ID@TC=100 | 40 | A | 1 | |||
| Pulsed Drain Current | IDM | 150 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 55 | mJ | VDD=15V, VGS=10V, L=1.0mH, IAS=10A | 1 | ||
| Avalanche Current | IAS | 40 | A | 1 | |||
| Total Power Dissipation | PD@TC=25 | 50 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 175 | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | 1 | |||
| Thermal Resistance Junction-ambient | R JA | 45 | /W | surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | R JC | 2.5 | /W | surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6.5 | 8 | m | VGS=10V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 14 | m | VGS=4.5V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | V | VGS=VDS, ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=24V, VGS=0V, TJ=150℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS 20V, VDS=0V | 2 | ||
| Continuous Source Current | IS | 50 | A | 2 | |||
| Pulsed Source Current | ISM | 150 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | BVDSS TJ | 0.023 | V/ | Reference to 25, ID=250uA | 2 | ||
| VGS(th) Temperature Coefficient | VGS(th) | -5 | mV/ | VGS=VDS, ID=250uA | 2 | ||
| Forward Transconductance | gfs | 35 | S | VDS=5V, ID=10A | 2 | ||
| Gate Resistance | Rg | 2.4 | VDS=0V, VGS=0V, f=1MHz | 2 | |||
| Total Gate Charge | Qg | 12 | nC | VDS=15V, VGS=4.5V, ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 4.5 | nC | VDS=15V, VGS=4.5V, ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 6 | nC | VDS=15V, VGS=4.5V, ID=20A | 2 | ||
| Turn-On Delay Time | Td(on) | 10 | ns | VDD=15V, VGS=10V, RG=3.3, ID=20A | 2 | ||
| Rise Time | Tr | 25 | ns | VDD=15V, VGS=10V, RG=3.3, ID=20A | 2 | ||
| Turn-Off Delay Time | Td(off) | 20 | ns | VDD=15V, VGS=10V, RG=3.3, ID=20A | 2 | ||
| Fall Time | Tf | 14 | ns | VDD=15V, VGS=10V, RG=3.3, ID=20A | 2 | ||
| Input Capacitance | Ciss | 950 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 380 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 180 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
CMD1653 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd1653-etched.step/cmd1653-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd1653.step/cmd1653.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (2 pp, sha256
36dd4f3f81e7e194, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMD1653
**Cmos(广东场效应半导体)** · MOSFETs · TO-252
CMD1653 from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated at 30 V (VDS) with continuous drain current of 50 A at TC=25°C. |
| 3 | S | passive | Source terminal; continuous source current is rated at 50 A (IS) and pulsed source current at 150 A (ISM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25 | | | 50 | A | | 1 |
| Continuous Drain Current | ID@TC=100 | | | 40 | A | | 1 |
| Pulsed Drain Current | IDM | | | 150 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 55 | mJ | VDD=15V, VGS=10V, L=1.0mH, IAS=10A | 1 |
| Avalanche Current | IAS | | | 40 | A | | 1 |
| Total Power Dissipation | PD@TC=25 | | | 50 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | | | 1 |
| Thermal Resistance Junction-ambient | R JA | | | 45 | /W | surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Case | R JC | | | 2.5 | /W | surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 6.5 | 8 | m | VGS=10V, ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 11 | 14 | m | VGS=4.5V, ID=20A | 2 |
| Gate Threshold Voltage | VGS(th) | | | 3 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 10 | uA | VDS=24V, VGS=0V, TJ=150℃ | 2 |
| Gate-Source Leakage Current | IGSS | | | 100 | nA | VGS 20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | 50 | A | | 2 |
| Pulsed Source Current | ISM | | | 150 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=20A, TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | BVDSS TJ | | 0.023 | | V/ | Reference to 25, ID=250uA | 2 |
| VGS(th) Temperature Coefficient | VGS(th) | | -5 | | mV/ | VGS=VDS, ID=250uA | 2 |
| Forward Transconductance | gfs | | 35 | | S | VDS=5V, ID=10A | 2 |
| Gate Resistance | Rg | | 2.4 | | | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 12 | | nC | VDS=15V, VGS=4.5V, ID=20A | 2 |
| Gate-Source Charge | Qgs | | 4.5 | | nC | VDS=15V, VGS=4.5V, ID=20A | 2 |
| Gate-Drain Charge | Qgd | | 6 | | nC | VDS=15V, VGS=4.5V, ID=20A | 2 |
| Turn-On Delay Time | Td(on) | | 10 | | ns | VDD=15V, VGS=10V, RG=3.3, ID=20A | 2 |
| Rise Time | Tr | | 25 | | ns | VDD=15V, VGS=10V, RG=3.3, ID=20A | 2 |
| Turn-Off Delay Time | Td(off) | | 20 | | ns | VDD=15V, VGS=10V, RG=3.3, ID=20A | 2 |
| Fall Time | Tf | | 14 | | ns | VDD=15V, VGS=10V, RG=3.3, ID=20A | 2 |
| Input Capacitance | Ciss | | 950 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 380 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 180 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `CMD1653`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `cmd1653-etched.step` / `cmd1653-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmd1653.step` / `cmd1653.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590904034305777664) (2 pp, sha256 `36dd4f3f81e7e194`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cmd1653-datasheet.pdf)