component

CMD12P10S

Public Made by Adom

by adom

Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorcmd12p10sfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

CMD12P10S

Cmos · MOSFETs · TO-252

CMD12P10S from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is limited to ±20 V with threshold of -1 to -3 V.
2 D passive Drain, connected to the metal tab; rated -100 V drain-source and -9 A continuous at TC=25°C.
3 S passive Source; continuous source current is -9 A and pulsed source current is -36 A.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Total Power Dissipation PD 40 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Continuous Drain Current ID -9 A TC=25℃ 1
Continuous Drain Current ID -6.5 A TC=100℃ 1
Pulsed Drain Current IDM -36 A 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W 1
Thermal Resistance Junction-case RθJC 3.1 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V , ID=-250uA 2
Gate Threshold Voltage VGS(th) -1 -3 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-100V , VGS=0V 2
Drain-Source Leakage Current IDSS -10 uA VDS=-80V, TC =125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS = ±20V , VDS=0V 2
Static Drain-Source On-Resistance RDS(ON) 170 240 mΩ VGS=-10V, ID=-6A 2
Static Drain-Source On-Resistance RDS(ON) 180 250 mΩ VGS=-4.5V, ID=-5A 2
Continuous Source Current IS -9 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM -36 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD -0.94 -1.2 V VGS=0V , IF=-12A 2
Forward Transconductance gfs 20 S VDS=-5V, ID=-10A 2
Total Gate Charge Qg 18 nC 2
Gate-Source Charge Qgs 5 nC 2
Gate-Drain Charge Qgd 9 nC 2
Turn-On Delay Time Td(on) 13 ns 2
Rise Time Tr 140 ns 2
Turn-Off Delay Time Td(off) 30 ns 2
Fall Time Tf 50 ns 2
Input Capacitance Ciss 1500 pF VDS=-25V , VGS=0V , f=1MHz 2

CAD (KiCad official)

  • Symbol: CMD12P10S
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd12p10s-etched.step / cmd12p10s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd12p10s.step / cmd12p10s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (3 pp, sha256 5893335aa07bfcaf, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF