component

CMD05N03A

Public Made by Adom

by adom

Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorcmd05n03afactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
cmd05n03a / README.md
History Download
Ray Publish 0.1.0 4699688 15d ago

CMD05N03A

Cmos · MOSFETs · TO-252

CMD05N03A from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold of 1 V min to 3 V max at VGS=VDS, ID=250uA.
2 D passive Drain; drain-source voltage 30 V max, continuous drain current 80 A at TC=25℃ and pulsed 240 A.
3 S passive Source; continuous source (body diode) current 80 A max with forward voltage 1.2 V max at IS=20A.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 80 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 64 A TC=100℃ 1
Pulsed Drain Current IDM 240 A 1
Single Pulse Avalanche Energy EAS 220 mJ 1
Total Power Dissipation PD@TC=25℃ 75 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.5 mΩ VGS=10V, ID=28A 2
Static Drain-Source On-Resistance RDS(ON) 6.8 mΩ VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V 2
Drain-Source Leakage Current IDSS 10 uA VDS=24V, VGS=0V, TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS ±20V, VDS=0V 2
Continuous Source Current IS 80 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=20A, TJ=25℃ 2
Forward Transconductance gfs 33 S VDS=5V, ID=15A 2
Gate Resistance Rg 2.1 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 15 nC VDS=15V, VGS=4.5V, ID=30A 2
Gate-Source Charge Qgs 7 nC VDS=15V, VGS=4.5V, ID=30A 2
Gate-Drain Charge Qgd 3 nC VDS=15V, VGS=4.5V, ID=30A 2
Turn-On Delay Time Td(on) 15 ns VDS=15V, VGS=4.5V, RG=3Ω 2
Rise Time Tr 21 ns VDS=15V, VGS=4.5V, RG=3Ω 2
Turn-Off Delay Time Td(off) 22 ns VDS=15V, VGS=4.5V, RG=3Ω 2
Fall Time Tf 6 ns VDS=15V, VGS=4.5V, RG=3Ω 2
Input Capacitance Ciss 2400 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 765 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 30 pF VDS=15V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMD05N03A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd05n03a-etched.step / cmd05n03a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd05n03a.step / cmd05n03a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (5 pp, sha256 81c1e2b9110afc32, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF