component
CMD04N03D
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| cmd04n03d-etched.glb | 16d ago |
| cmd04n03d-etched.step | 16d ago |
| cmd04n03d-hero.glb | 16d ago |
| cmd04n03d-hero.overlay.json | 16d ago |
| cmd04n03d.glb | 16d ago |
| cmd04n03d.kicad_mod | 16d ago |
| cmd04n03d.kicad_sym | 16d ago |
| cmd04n03d.lbr | 16d ago |
| cmd04n03d.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
CMD04N03D
Cmos(广东场效应半导体) · MOSFETs · TO-252
CMD04N03D from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; ESD protected, gate-source voltage limited to ±16 V with threshold of 1 V min to 3 V max at 250 µA. |
| 2 | D | passive | Drain (also the exposed tab); drain-source voltage 30 V max, continuous drain current 70 A at TC=25℃ and 280 A pulsed. |
| 3 | S | passive | Source; continuous body-diode source current 70 A and 280 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -16 | 16 | V | 1 | ||
| Continuous Drain Current | ID | 70 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 56 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 280 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 288 | mJ | VDD=25V, VGS=10V, L=1mH, IAS=24A | 1 | ||
| Total Power Dissipation | PD | 65 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 145 | ℃/W | Steady-State | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.92 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -10 | 10 | uA | VGS=±16V, VDS=0V | 2 | |
| Continuous Source Current | IS | 70 | A | 2 | |||
| Pulsed Source Current | ISM | 280 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.83 | 1.2 | V | VGS=0V, IS=28A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
CMD04N03D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd04n03d-etched.step/cmd04n03d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd04n03d.step/cmd04n03d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256
9d1bc83dca400074, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).