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Contents

README

markdown

CMB75NF75

Cmos · MOSFETs · TO-263

CMB75NF75 from Cmos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V max and threshold VGS(th) of 2 to 4 V at ID=250uA.
2 D passive Drain; 80 V max VDS, 80 A continuous at TC=25℃ and 320 A pulsed.
3 S passive Source; continuous body-diode source current is 80 A max and 320 A pulsed.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V , ID=250uA 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=80V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS = ±20V , VDS=0V 2
Continuous Source Current IS 80 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 320 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 0.9 1.4 V VGS=0V , IS=30A , TJ=25℃ 2
Drain-Source Voltage VDS 80 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 80 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 64 A TC=100℃ 1
Pulsed Drain Current IDM 320 A 1
Single Pulse Avalanche Energy EAS 338 mJ VDD=30V,VGS=10V,L=1mH,IAS=26A 1
Total Power Dissipation PD@TC=25℃ 200 W TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-case RθJC 0.88 ℃/W 1
Static Drain-Source On-Resistance RDS(ON) 9 mΩ VGS=10V , ID=30A 2
Forward Transconductance gfs 19 S VDS=10V , ID=15A 2
Gate Resistance Rg 2.5 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge Qg 92 nC ID=50A, VDS=40V, VGS=10V 2
Gate-Source Charge Qgs 25 nC ID=50A, VDS=40V, VGS=10V 2
Gate-Drain Charge Qgd 31 nC ID=50A, VDS=40V, VGS=10V 2
Turn-On Delay Time Td(on) 19 ns VDD=30V, ID=2A, VGS=10V, RG=2.5Ω 2
Rise Time Tr 13 ns VDD=30V, ID=2A, VGS=10V, RG=2.5Ω 2
Turn-Off Delay Time Td(off) 55 ns VDD=30V, ID=2A, VGS=10V, RG=2.5Ω 2
Fall Time Tf 16 ns VDD=30V, ID=2A, VGS=10V, RG=2.5Ω 2
Input Capacitance Ciss 5300 pF VDS=25V , VGS=0V , f=1MHz 2
Output Capacitance Coss 345 pF VDS=25V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 260 pF VDS=25V , VGS=0V , f=1MHz 2

CAD (KiCad official)

  • Symbol: CMB75NF75
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: cmb75nf75-etched.step / cmb75nf75-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmb75nf75.step / cmb75nf75.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (2 pp, sha256 ce1d3334c44c3e0c, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF